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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 85V 100A TO-220 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO-220-3 0 500 N-Channel - 85V 100A (Tc) 6.5 mOhm @ 100A, 10V 4V @ 180µA 138nC @ 10V 9240pF @ 40V 10V ±20V 214W (Tc)
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Per Unit
$2.734
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Infineon Technologies MOSFET N-CH 100V 180A TO263-7 TO-263-8, D²Pak (7 Leads + Tab), TO-263CA OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active PG-TO263-7 0 1000 N-Channel - 100V 180A (Tc) 2.4 mOhm @ 90A, 10V 3.8V @ 183µA 138nC @ 10V 10200pF @ 50V 6V, 10V ±20V 250W (Tc)
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Per Unit
$9.560
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Infineon Technologies MOSFET N-CH 600V 57.7A TO220 TO-220-3 CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Not For New Designs PG-TO-220-3 0 1 N-Channel - 600V 57.7A (Tc) 74 mOhm @ 21A, 10V 3.5V @ 1.4mA 138nC @ 10V 3020pF @ 100V 10V ±20V 480.8W (Tc)
IRFH7440TRPBF
5+
$1.000
25+
$0.850
RFQ
36,000
In-stock
Infineon Technologies MOSFET N-CH 40V 85A 8PQFN 8-PowerTDFN HEXFET®, StrongIRFET™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-PQFN (5x6) 0 4000 N-Channel - 40V 85A (Tc) 2.4 mOhm @ 50A, 10V 3.9V @ 100µA 138nC @ 10V 4574pF @ 25V 6V, 10V ±20V 104W (Tc)
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