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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 100V 100A TO220-3 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO-220-3 0 500 N-Channel - 100V 100A (Tc) 5.1 mOhm @ 100A, 10V 2.4V @ 250µA 163nC @ 10V 15600pF @ 50V 4.5V, 10V ±20V 300W (Tc)
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$3.686
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Infineon Technologies MOSFET N-CH 100V 180A D2PAK-7 TO-263-7, D²Pak (6 Leads + Tab) OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active PG-TO263-7 0 1000 N-Channel - 100V 180A (Tc) 1.7 mOhm @ 100A, 10V 3.8V @ 279µA 210nC @ 10V 15600pF @ 50V 6V, 10V ±20V 375W (Tc)
023N10N5
10+
$7.000
RFQ
4,040
In-stock
Infineon Technologies MOSFET N-CH 100V 120A TO220-3 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active PG-TO-220-3 0 1 N-Channel - 100V 120A (Tc) 2.3 mOhm @ 100A, 10V 3.8V @ 270µA 210nC @ 10V 15600pF @ 50V 6V, 10V ±20V 375W (Tc)
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