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- Current - Continuous Drain (Id) @ 25°C :
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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 20V 4.2A SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Micro3™/SOT-23 | 0 | 3000 | N-Channel | - | 20V | 4.2A (Ta) | 45 mOhm @ 4.2A, 4.5V | 1.2V @ 250µA | 12nC @ 5V | 740pF @ 15V | 2.5V, 4.5V | ±12V | 1.25W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 2.7A MICRO8 | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | FETKY™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro8™ | 0 | 4000 | N-Channel | Schottky Diode (Isolated) | 30V | 2.7A (Ta) | 130 mOhm @ 1.7A, 10V | 1V @ 250µA | 12nC @ 10V | 210pF @ 25V | 4.5V, 10V | ±20V | 1.25W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 2.7A MICRO8 | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | FETKY™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro8™ | 0 | 4000 | N-Channel | Schottky Diode (Isolated) | 30V | 2.7A (Ta) | 130 mOhm @ 1.7A, 10V | 1V @ 250µA | 12nC @ 10V | 210pF @ 25V | 4.5V, 10V | ±20V | 1.25W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 2.7A MICRO-8 | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | FETKY™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro8™ | 0 | 95 | N-Channel | Schottky Diode (Isolated) | 30V | 2.7A (Ta) | 130 mOhm @ 1.7A, 10V | 1V @ 250µA | 12nC @ 10V | 210pF @ 25V | 4.5V, 10V | ±20V | 1.25W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 4.2A SOT-23 | TO-236-3, SC-59, SOT-23-3 | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Micro3™/SOT-23 | 0 | 1 | N-Channel | - | 20V | 4.2A (Ta) | 45 mOhm @ 4.2A, 4.5V | 1.2V @ 250µA | 12nC @ 5V | 740pF @ 15V | 2.7V, 4.5V | ±12V | 1.25W (Ta) | ||||
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5,000
In-stock
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Diodes Incorporated | MOSFET BVDSS: 41V 60V,SO-8,T&R,2 | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 5000 | 2500 | N-Channel | - | 60V | 10.8A (Ta) | 9.5 mOhm @ 13.5A, 10V | 2V @ 250µA | 33.5nC @ 10V | 1925pF @ 30V | 4.5V, 10V | ±20V | 1.25W (Ta) | |||
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39,000
In-stock
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Infineon Technologies | MOSFET N-CH 60V 1.2A SOT23-3 | TO-236-3, SC-59, SOT-23-3 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | Micro3™/SOT-23 | 0 | 3000 | N-Channel | - | 60V | 1.2A (Ta) | 480 mOhm @ 1.2A, 10V | 2.5V @ 25µA | 0.67nC @ 4.5V | 64pF @ 25V | 4.5V, 10V | ±16V | 1.25W (Ta) |
