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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 40V 180A TO220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 250 N-Channel - 40V 180A (Tc) 3.7 mOhm @ 75A, 10V 4V @ 250µA 150nC @ 10V 4340pF @ 25V 10V ±20V 220W (Tc)
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Infineon Technologies MOSFET N-CH 40V 75A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 200 N-Channel - 40V 75A (Tc) 3.7 mOhm @ 75A, 10V 4V @ 250µA 150nC @ 10V 4340pF @ 25V 10V ±20V 220W (Tc)
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Per Unit
$3.430
RFQ
8,188
In-stock
Infineon Technologies MOSFET N-CH 60V 120A TO-247AC TO-247-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-247AC 0 1 N-Channel - 60V 120A (Tc) 4.2 mOhm @ 75A, 10V 4V @ 150µA 120nC @ 10V 4520pF @ 50V 10V ±20V 220W (Tc)
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