- Mounting Type :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 500V 3.6A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | D-PAK | 0 | 375 | N-Channel | - | 500V | 3.6A (Tc) | 2.2 Ohm @ 2.2A, 10V | 5V @ 250µA | 20nC @ 10V | 810pF @ 25V | 10V | ±20V | 78W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 375 | N-Channel | - | 55V | 42A (Tc) | 8 mOhm @ 42A, 10V | 3V @ 250µA | 66nC @ 5V | 2900pF @ 25V | 4.5V, 10V | ±16V | 130W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 250V 14A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 375 | N-Channel | - | 250V | 14A (Tc) | 260 mOhm @ 8.4A, 10V | 5V @ 250µA | 35nC @ 10V | 810pF @ 25V | 10V | ±30V | 144W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 16A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 375 | N-Channel | - | 100V | 16A (Tc) | 115 mOhm @ 10A, 10V | 4V @ 250µA | 44nC @ 10V | 640pF @ 25V | 10V | ±20V | 79W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 86A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | IPAK (TO-251) | 0 | 375 | N-Channel | - | 30V | 86A (Tc) | 6.5 mOhm @ 15A, 10V | 2.25V @ 250µA | 26nC @ 4.5V | 2330pF @ 15V | 4.5V, 10V | ±20V | 79W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 90A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | IPAK (TO-251) | 0 | 375 | N-Channel | - | 30V | 90A (Tc) | 9 mOhm @ 15A, 10V | 3V @ 250µA | 41nC @ 4.5V | 2672pF @ 16V | 4.5V, 10V | ±20V | 120W (Tc) |
