- Mounting Style :
- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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14,505
In-stock
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Diodes Incorporated | MOSFET N-Chnl 240V | 40 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 260 mA | 6 Ohms | Enhancement | |||||
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9,500
In-stock
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Diodes Incorporated | MOSFET 25V N-Ch ENH FET 25Vds 8Vgs 0.32W | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 260 mA | 4 Ohms | 700 mV | 360 pC | Enhancement | |||
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8,622
In-stock
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Diodes Incorporated | MOSFET 30V DUAL N-CH MOSFET | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 260 mA | 2.8 Ohms | 1.5 V | 0.87 nC | Enhancement | |||
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624
In-stock
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Diodes Incorporated | MOSFET N-Chnl 240V | 40 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 260 mA | 6 Ohms | Enhancement |
