- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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13,599
In-stock
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Diodes Incorporated | MOSFET -50V 200mW | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 50 V | - 130 mA | 6 Ohms | Enhancement | |||||
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3,970
In-stock
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Diodes Incorporated | MOSFET P-Ch -50V Enh FET 10Ohm -5Vgs -130mA | +/- 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 50 V | - 130 mA | 1.2 Ohms | - 2 V | 900 pC | Enhancement | |||
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3,985
In-stock
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Diodes Incorporated | MOSFET Dual P-Channel | 15 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 50 V | - 130 mA | 10 Ohms | Enhancement | |||||
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30,000
In-stock
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Diodes Incorporated | MOSFET -50V 200mW | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 50 V | - 130 mA | 6 Ohms | Enhancement | |||||
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44,900
In-stock
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Diodes Incorporated | MOSFET -50V 250mW | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 50 V | - 130 mA | 10 Ohms | Enhancement |
