- Vgs - Gate-Source Voltage :
- Package / Case :
-
- DFN2020MD-6 (1)
- ECH-8 (3)
- ISOTOP-4 (1)
- Power-33-8 (1)
- Power-56-8 (1)
- SC-59-3 (1)
- SMD-24 (2)
- SO-8 (6)
- SO-FL-8 (3)
- SOP-Advance-8 (1)
- SOT-23-3 (2)
- SOT-26-6 (1)
- SSOT-6 (2)
- TDSON-8 (1)
- TO-252-3 (7)
- TO-252-5 (2)
- TO-263-3 (3)
- TO-268-3 (3)
- TSOP-6 (1)
- TSSOP-8 (1)
- uDFN-6 (2)
- UMLP-6 (1)
- WDFN-8 (2)
- WSON-FET-6 (1)
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
49 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Qualification | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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43,925
In-stock
|
Nexperia | MOSFET 20V N-channel Trench MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 5.4 A | 24 mOhms | 400 mV | 6.2 nC | Enhancement | ||||||
|
6,055
In-stock
|
Fairchild Semiconductor | MOSFET P-CHAN -20V -8A 2.1W | SMD/SMT | UMLP-6 | - 55 C | + 150 C | Reel | Si | P-Channel | - 20 V | - 8 A | 24 mOhms | PowerTrench | ||||||||||
|
11,840
In-stock
|
Fairchild Semiconductor | MOSFET 40V Dual N & P-Ch PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-5 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V | 9 A | 24 mOhms | Enhancement | PowerTrench | |||||||
|
4,203
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 7 A | 24 mOhms | 1.6 V | 15.3 nC | PowerTrench | ||||||
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1,483
In-stock
|
STMicroelectronics | MOSFET N-Ch 100 Volt 50 Amp | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 24 mOhms | Enhancement | ||||||||
|
2,217
In-stock
|
STMicroelectronics | MOSFET N-Ch 100V 0.02 Ohm typ. 35A STripFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 32 A | 24 mOhms | 4.5 V | 19 nC | |||||||
|
3,815
In-stock
|
Infineon Technologies | MOSFET 80V 1 N-CH HEXFET 29mOhms 37nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 38 A | 24 mOhms | 4 V | 37 nC | Enhancement | ||||||
|
65
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | ISOTOP-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 88 A | 24 mOhms | 3 V | 204 nC | Enhancement | ||||||
|
14,486
In-stock
|
Fairchild Semiconductor | MOSFET 20V N-Channel 2.5V Spec PowerTrench | 12 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6.2 A | 24 mOhms | Enhancement | PowerTrench | |||||||
|
3,472
In-stock
|
Fairchild Semiconductor | MOSFET SO-8 P-CH -20V | 8 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 8 A | 24 mOhms | Enhancement | PowerTrench | |||||||
|
2,220
In-stock
|
Fairchild Semiconductor | MOSFET Dual N&PCH PwrTrench +/- 40V,20A | SMD/SMT | TO-252-5 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V | 9 A | 24 mOhms | Enhancement | PowerTrench | ||||||||
|
2,740
In-stock
|
Fairchild Semiconductor | MOSFET SO-8 DUAL P-CH -20V | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 6 A | 24 mOhms | Enhancement | PowerTrench | |||||||
|
1,380
In-stock
|
Fairchild Semiconductor | MOSFET SO-8 DUAL N-CH 30V | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 6 A | 24 mOhms | Enhancement | PowerTrench | |||||||
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2,235
In-stock
|
Fairchild Semiconductor | MOSFET 100V NChannel UniFET | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 44 A | 24 mOhms | UltraFET | |||||||||
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10,000
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 19mOhms 33.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 46 A | 24 mOhms | 33.3 nC | Enhancement | |||||||
|
7,391
In-stock
|
Diodes Incorporated | MOSFET DUAL N-CHANNEL | 8 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 6.5 A | 24 mOhms | 0.9 V | 8.8 nC | Enhancement | ||||||
|
170
In-stock
|
IXYS | MOSFET MOSFET N CHANNEL | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 24 mOhms | 2.5 V | 103 nC | Enhancement | ||||||
|
226
In-stock
|
IXYS | MOSFET 96 Amps 200V 0.024 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 96 A | 24 mOhms | 5 V | 145 nC | Enhancement | PolarHT, HiPerFET | |||||
|
5,000
In-stock
|
Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 30V N-CHANNEL | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.5 A | 24 mOhms | 1 V | 12.9 nC | Enhancement | ||||||
|
513
In-stock
|
Fairchild Semiconductor | MOSFET 100V NCHAN PwrTrench | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8.3 A | 24 mOhms | PowerTrench | |||||||||
|
30,000
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 16 A | 24 mOhms | 2.9 V | 6.7 nC | PowerTrench | ||||||
|
4,896
In-stock
|
Diodes Incorporated | MOSFET MOSFET,N-CHANNEL | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 8 A | 24 mOhms | Enhancement | ||||||||
|
1,401
In-stock
|
onsemi | MOSFET NFET U8FL 60V | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 24 mOhms | 1.5 V to 3 V | 8.4 nC | |||||||
|
1,774
In-stock
|
Nexperia | MOSFET PMV28UNEA/TO-236AB/REEL 7" Q3/ | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.7 A | 24 mOhms | 450 mV | 10 nC | Enhancement | ||||||
|
1,248
In-stock
|
Diodes Incorporated | MOSFET 30V Dual N-channel Enhance. Mode MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 7.3 A | 24 mOhms | Enhancement | ||||||||
|
547
In-stock
|
onsemi | MOSFET POWER MOSFET 20V 5.6A SNGL CH | 8 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 5.6 A | 24 mOhms | Enhancement | ||||||||
|
2,471
In-stock
|
Diodes Incorporated | MOSFET 30V N-CH MOSFET | 20 V | SMD/SMT | SC-59-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4.2 A | 24 mOhms | 1.1 V | 13.2 nC | Enhancement | ||||||
|
2,015
In-stock
|
Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 30V N-CHANNEL | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14.4 A | 24 mOhms | 1 V | 12.9 nC | Enhancement | ||||||
|
1,688
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V 24V TSSOP-8 T&R 2.5K | 12 V | SMD/SMT | TSSOP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 5.4 A | 24 mOhms | 0.95 V | 8.8 nC | Enhancement | ||||||
|
17
In-stock
|
IXYS | MOSFET 3 Phase Full Bridge | 20 V | SMD/SMT | SMD-24 | - 55 C | + 175 C | Reel | Si | N-Channel | 150 V | 50 A | 24 mOhms | 97 nC | ISOPLUS-DIL |