- Manufacture :
- Mounting Style :
- Package / Case :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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5,028
In-stock
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Infineon Technologies | MOSFET 150V SINGLE N-CH 31mOhms 33nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 10 A | 31 mOhms | 3 V to 5 V | 36 nC | Enhancement | |||
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3,399
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 31mOhms 19.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 33 A | 31 mOhms | 4 V | 29 nC | Enhancement | |||
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2,818
In-stock
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Nexperia | MOSFET 30V N-channel Trench MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.6 A | 31 mOhms | 1 V | 6.3 nC | Enhancement | |||
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737
In-stock
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IR / Infineon | MOSFET MOSFT 30V 33A 31mOhm 29nC | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 33 A | 31 mOhms | 19.3 nC | Enhancement | ||||
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167
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 31mOhms 19.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 33 A | 31 mOhms | 2 V to 4 V | 19.3 nC | Enhancement |
