- Mounting Style :
- Package / Case :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
150
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Chan MOSFET FRFET, SupreMOS | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 45.8 A | 57.5 mOhms | SupreMOS FRFET | |||||||
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GET PRICE |
39,410
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 5.1A 57.5mOhm 9.1nC | SMD/SMT | SOT-223-4 | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 5.1 A | 57.5 mOhms | 4 V | 14 nC | ||||||
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GET PRICE |
1,270
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 5.1mOhms 9.1nC | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 55 V | 5.1 A | 57.5 mOhms | 2 V to 4 V | 9.1 nC | Enhancement |
