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Maximum Operating Temperature :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Qg - Gate Charge :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
NTD6416ANLT4G
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4,133
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onsemi MOSFET NFET DPAK 100V 17A 106MO 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 100 V 19 A 74 mOhms   25 nC Enhancement  
BSZ900N15NS3 G
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7,129
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Infineon Technologies MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3 20 V SMD/SMT TSDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 150 V 13 A 74 mOhms 2 V 7 nC Enhancement OptiMOS
BSZ900N15NS3GATMA1
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RFQ
4,919
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Infineon Technologies MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3 20 V SMD/SMT TSDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 150 V 13 A 74 mOhms 2 V 7 nC Enhancement OptiMOS
NVD6416ANLT4G
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RFQ
2,496
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onsemi MOSFET NFET DPAK 100V 19A 81MOHM   SMD/SMT TO-252-3 - 55 C + 175 C Reel   Si N-Channel 100 V 80 A 74 mOhms        
NVD6416ANT4G
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RFQ
2,500
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onsemi MOSFET NFET DPAK 100V 17A 81MOHM   SMD/SMT TO-252-3 - 55 C + 175 C Reel   Si N-Channel 100 V 80 A 74 mOhms        
TPC6008-H(TE85L,FM
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Toshiba MOSFET N-Ch 30V FET 5.9A 2.2W 232pF     VS6-6     Reel 1 Channel Si N-Channel 30 V 5.9 A 74 mOhms        
TK40P03M1(T6RDS-Q)
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RFQ
Toshiba MOSFET N-Ch MOS 20A 40V 25W 410pF 0.074   SMD/SMT TO-252-3     Reel 1 Channel Si N-Channel 30 V 40 A 74 mOhms        
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