PART NO.	PRICE		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
STW6N90K5	1+ $2.800 10+ $2.380 100+ $2.060 250+ $1.960	PDF RFQ	599 In-stock	STMicroelectronics	MOSFET N-channel 900 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSF...	30 V	Through Hole	TO-247-3	- 55 C	+ 150 C		1 Channel	Si	N-Channel	900 V	6 A	910 mOhms	3 V	11 nC	Enhancement
APT13F120B	1+ $11.040 10+ $10.040 25+ $9.280 50+ $8.780	PDF RFQ	54 In-stock	Microsemi	MOSFET Power FREDFET - MOS8	30 V	Through Hole	TO-247-3	- 55 C	+ 150 C	Reel		Si	N-Channel	1200 V	14 A	910 mOhms	4 V	145 nC	Enhancement	POWER MOS 8
STF6N90K5	1+ $2.320 10+ $1.970 100+ $1.580 500+ $1.380	PDF RFQ	1,000 In-stock	STMicroelectronics	MOSFET N-channel 900 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSF...	+/- 30 V	Through Hole	TO-220FP-3	- 55 C	+ 150 C		1 Channel	Si	N-Channel	900 V	6 A	910 mOhms	3 V	11 nC	Enhancement
STP6N90K5	1+ $2.260 10+ $1.920 100+ $1.540 500+ $1.350	PDF RFQ	1,000 In-stock	STMicroelectronics	MOSFET N-channel 900 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSF...	+/- 30 V	Through Hole	TO-220-3	- 55 C	+ 150 C		1 Channel	Si	N-Channel	900 V	6 A	910 mOhms	3 V	11 nC	Enhancement