- Manufacture :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Channel Mode :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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8,525
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 90mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 170 mA | 2.9 Ohms | - 2.9 V | 2.8 nC | Depletion | |||
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5,556
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 90mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 170 mA | 2.9 Ohms | - 2.9 V | 2.8 nC | Depletion | |||
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7,318
In-stock
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onsemi | MOSFET NCH 1.8V DRIVE SERIE | 12 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.5 A | 54 mOhms | 400 mV | 2.8 nC | Enhancement | ||||
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366
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.8 A | 61 mOhms | 300 mV | 2.8 nC | Enhancement | |||
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1,743
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 90mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 170 mA | 2.9 Ohms | - 2.9 V | 2.8 nC | Depletion |
