- Vgs - Gate-Source Voltage :
- Mounting Style :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
18 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
45
In-stock
|
IXYS | MOSFET 850V/90A Ultra Junction X-Class | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 90 A | 41 mOhms | 3.5 V | 340 nC | Enhancement | HiPerFET | |||
|
|
10
In-stock
|
IXYS | MOSFET 850V/90A Ultra Junction X-Class | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 90 A | 41 mOhms | 3.5 V | 340 nC | Enhancement | HiPerFET | |||
|
|
30
In-stock
|
IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | +/- 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 40 A | 145 mOhms | 3.5 V | 98 nC | Enhancement | HiPerFET | |||
|
|
263
In-stock
|
IXYS | MOSFET 650V/145A Ultra Junction X2-Class | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 145 A | 17 mOhms | 2.7 V | 355 nC | Enhancement | HiPerFET | ||||
|
|
146
In-stock
|
IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 50 A | 105 mOhms | 3.5 V | 152 nC | Enhancement | HiPerFET | |||
|
|
88
In-stock
|
IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 50 A | 105 mOhms | 3.5 V | 152 nC | Enhancement | HiPerFET | |||
|
|
100
In-stock
|
IXYS | MOSFET 650V/80A Ultra Junction X2-Class | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 80 A | 38 mOhms | 2.7 V | 140 nC | Enhancement | HiPerFET | ||||
|
|
170
In-stock
|
IXYS | MOSFET MOSFET 650V/46A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 46 A | 76 mOhms | 2.7 V | 75 nC | Enhancement | HiPerFET | |||
|
|
64
In-stock
|
IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 20 A | 330 mOhms | 3.5 V | 63 nC | Enhancement | HiPerFET | |||
|
|
87
In-stock
|
IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 20 A | 330 mOhms | 3.5 V | 63 nC | Enhancement | HiPerFET | |||
|
|
20
In-stock
|
IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 65 A | 65 mOhms | 3.5 V | 230 nC | Enhancement | HiPerFET | |||
|
|
88
In-stock
|
IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 20 A | 330 mOhms | 3.5 V | 63 nC | Enhancement | HiPerFET | |||
|
|
25
In-stock
|
IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 66 A | 65 mOhms | 3.5 V | 230 nC | Enhancement | HiPerFET | |||
|
|
9
In-stock
|
IXYS | MOSFET HiperFET Pwr MOSFET Q3-Class | 30 V | SMD/SMT | SMPD-24 | - 55 C | + 150 C | Tube | Si | N-Channel | 1000 V | 30 A | 245 mOhms | 264 nC | HiPerFET | ||||||
|
|
50
In-stock
|
IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 66 A | 65 mOhms | 3.5 V | 230 nC | Enhancement | HiPerFET | |||
|
|
35
In-stock
|
IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 50 A | 105 mOhms | 3.5 V | 152 nC | Enhancement | HiPerFET | |||
|
|
10
In-stock
|
IXYS | MOSFET Trench HiperFETs Power MOSFETs | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 120 A | 23 mOhms | 5 V | 180 nC | Enhancement | HiPerFET | |||
|
|
39
In-stock
|
IXYS | MOSFET 15 Amps 1000V 1 Rds | 30 V | Through Hole | PLUS-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 760 mOhms | Enhancement | HiPerFET |
