- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,484
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W | 10 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8.3 A | 16 mOhms | 2 V | 33.3 nC | Enhancement | |||||
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2,490
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 100Vds 20Vgs 125W | 10 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 28 mOhms | 2.5 V | 36 nC | Enhancement | |||||
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GET PRICE |
9,760
In-stock
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STMicroelectronics | MOSFET Automotive-grade N-channel 100 V, 0.0125 Ohm typ., 45 A STri... | 10 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 22 A | 18 mOhms | 2.5 V | 25 nC | Enhancement | ||||
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690
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W | 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 13.5 mOhms | 2 V | 33.3 nC | Enhancement | PowerDI | ||||
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1,865
In-stock
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Toshiba | MOSFET UMOSVIII 100V 48m max(VGS=10V) DPAK | 10 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 7 A | 48 mOhms | ||||||||||
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108
In-stock
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Toshiba | MOSFET 100V N-Ch PWR FET 8800pF 140nC 207A | 10 V | Through Hole | TO-220-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 207 A | 3.4 mOhms | 140 nC | |||||||||
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435
In-stock
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Toshiba | MOSFET N-Ch PWR FET 75A 103W 100V VDSS | 10 V | Through Hole | TO-220-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 75 A | 9.5 mOhms | ||||||||||
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194
In-stock
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Toshiba | MOSFET N-Ch PWR FET 52A 72W 100V VDSS | 10 V | Through Hole | TO-220-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 52 A | 13.8 mOhms | ||||||||||
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2,000
In-stock
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Toshiba | MOSFET UMOSVIII 100V 10m max(VGS=10V) DPAK | 10 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 33 A | 9.7 mOhms | ||||||||||
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VIEW | Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W | 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 13.5 mOhms | 2 V | 33.3 nC | Enhancement | PowerDI | ||||
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VIEW | Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W | 10 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 44 A | 16 mOhms | 2 V | 33.3 nC | Enhancement | PowerDI |