- Manufacture :
- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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5,820
In-stock
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Texas instruments | MOSFET 20V Dual N ch MOSFET | 10 V | SMD/SMT | PicoStar-4 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 7 A | 36 mOhms | 680 mV | 6 nC | Enhancement | ||||
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1,865
In-stock
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Toshiba | MOSFET UMOSVIII 100V 48m max(VGS=10V) DPAK | 10 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 7 A | 48 mOhms | |||||||||
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2,500
In-stock
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Texas instruments | MOSFET 20V Dual N ch MOSFET | 10 V | SMD/SMT | PicoStar-4 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 7 A | 36 mOhms | 680 mV | 6 nC | Enhancement |