- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,158
In-stock
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Fairchild Semiconductor | MOSFET Power MOSFET | 10 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 50 V | 16 A | 47 mOhms | Enhancement | ||||||
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2,751
In-stock
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Fairchild Semiconductor | MOSFET Power MOSFET | 10 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 50 V | 14 A | 100 mOhms | Enhancement | ||||||
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2,490
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 100Vds 20Vgs 125W | 10 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 28 mOhms | 2.5 V | 36 nC | Enhancement | ||||
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GET PRICE |
9,760
In-stock
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STMicroelectronics | MOSFET Automotive-grade N-channel 100 V, 0.0125 Ohm typ., 45 A STri... | 10 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 22 A | 18 mOhms | 2.5 V | 25 nC | Enhancement | |||
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VIEW | Diodes Incorporated | MOSFET 60V 175c N-Ch FET 20Vgss 2.6W 2090pF | 10 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 8 mOhms | 3 V | 41.3 nC | Enhancement | PowerDI | |||
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VIEW | Diodes Incorporated | MOSFET 60V 175c N-Ch FET 20Vgss 2.6W 2090pF | 10 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 8 mOhms | 3 V | 41.3 nC | Enhancement |
