- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Qualification | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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50,000
In-stock
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Texas instruments | MOSFET N-Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 5 A | 2.1 mOhms | 1.1 V | 14 nC | Enhancement | NexFET | ||||
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4,284
In-stock
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Texas instruments | MOSFET Dual N-Channel Nex FET Pwr MOSFET | 10 V | SMD/SMT | DSBGA-12 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 5 A | 42 mOhms | 1 V | 3.1 nC | NexFET | |||||
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2,488
In-stock
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Texas instruments | MOSFET 30V,NCh Nex FET Pwr MOSFET | 10 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5 A | 12.4 mOhms | 1.6 V | 3.6 nC | NexFET | |||||
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750
In-stock
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Texas instruments | MOSFET Dual N-Channel NexFET Pwr MOSFET | 10 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 5 A | 99 mOhms | 600 mV | 5.4 nC | NexFET | |||||
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8,977
In-stock
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Texas instruments | MOSFET Auto 30-V N-Ch NexFET Pwr MOSFET | 10 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | AEC-Q100 | 1 Channel | Si | N-Channel | 30 V | 5 A | 32 mOhms | 1.3 V | 2.1 nC | NexFET |
