- Manufacture :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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7,330
In-stock
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onsemi | MOSFET PCH+NCH 2.5V DRIVE SERIES | 10 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 350 mA | 3.7 Ohms | 1.58 nC | ||||||
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4,649
In-stock
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onsemi | MOSFET NCH 350MA 250V 2.5V | 10 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 350 mA | 5 Ohms | 400 mV | 2.1 nC | Enhancement | |||||
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5,736
In-stock
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onsemi | MOSFET POWER MOSFET | 10 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 350 mA | 3.7 Ohms | |||||||
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5,661
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 30V 20Vgss 350mW | 10 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 350 mA | 2.8 Ohms | 1.5 V | 0.9 nC | Enhancement | ||||
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VIEW | Diodes Incorporated | MOSFET N-Ch Enh Mode FET 30V 20Vgss 350mW | 10 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 350 mA | 2.8 Ohms | 1.5 V | 0.9 nC | Enhancement | ||||
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2,016
In-stock
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onsemi | MOSFET NCH 350MA 250V 2.5V DRIVE | 10 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 350 mA | 5 Ohms | 400 mV | 2.1 nC | Enhancement |