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Package / Case :
Number of Channels :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
MCH6613-TL-E
1+
$0.410
10+
$0.306
100+
$0.166
1000+
$0.125
3000+
$0.107
RFQ
7,330
In-stock
onsemi MOSFET PCH+NCH 2.5V DRIVE SERIES 10 V SMD/SMT SOT-363-6 - 55 C + 150 C Reel 2 Channel Si N-Channel, P-Channel 30 V 350 mA 3.7 Ohms   1.58 nC  
CPH3461-TL-W
1+
$0.400
10+
$0.325
100+
$0.199
1000+
$0.154
3000+
$0.131
RFQ
4,649
In-stock
onsemi MOSFET NCH 350MA 250V 2.5V 10 V SMD/SMT SOT-23-3   + 150 C Reel 1 Channel Si N-Channel 250 V 350 mA 5 Ohms 400 mV 2.1 nC Enhancement
MCH6602-TL-E
1+
$0.410
10+
$0.306
100+
$0.166
1000+
$0.125
3000+
$0.107
RFQ
5,736
In-stock
onsemi MOSFET POWER MOSFET 10 V SMD/SMT SOT-363-6 - 55 C + 150 C Reel 2 Channel Si N-Channel 30 V 350 mA 3.7 Ohms      
DMN63D8L-7
1+
$0.230
10+
$0.153
100+
$0.064
1000+
$0.044
3000+
$0.034
RFQ
5,661
In-stock
Diodes Incorporated MOSFET N-Ch Enh Mode FET 30V 20Vgss 350mW 10 V SMD/SMT SOT-23-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 30 V 350 mA 2.8 Ohms 1.5 V 0.9 nC Enhancement
DMN63D8L-13
1+
$0.230
10+
$0.153
100+
$0.064
1000+
$0.044
10000+
$0.029
VIEW
RFQ
Diodes Incorporated MOSFET N-Ch Enh Mode FET 30V 20Vgss 350mW 10 V SMD/SMT SOT-23-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 30 V 350 mA 2.8 Ohms 1.5 V 0.9 nC Enhancement
CPH3461-TL-H
1+
$0.440
10+
$0.332
100+
$0.209
1000+
$0.156
3000+
$0.133
RFQ
2,016
In-stock
onsemi MOSFET NCH 350MA 250V 2.5V DRIVE 10 V SMD/SMT SOT-23-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 250 V 350 mA 5 Ohms 400 mV 2.1 nC Enhancement
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