- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
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41 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
81
In-stock
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IXYS | MOSFET 60V/220A TrenchT3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 60 V | 220 A | 4 mOhms | 2 V | 136 nC | Enhancement | HiPerFET | ||
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GET PRICE |
87
In-stock
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IXYS | MOSFET 60V/220A TrenchT3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 60 V | 220 A | 4 mOhms | 2 V | 136 nC | Enhancement | HiPerFET | ||
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GET PRICE |
404
In-stock
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STMicroelectronics | MOSFET 1200V silicon carbide MOSFET | - 10 V, + 25 V | Through Hole | HiP247-3 | - 55 C | + 200 C | Tube | 1 Channel | SiC | N-Channel | 1.2 kV | 20 A | 215 mOhms | 2 V | 45 nC | Enhancement | |||
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GET PRICE |
13
In-stock
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IXYS | MOSFET CoolMOS Power Mosfet 600V 15A | 20 V | Through Hole | ISOPLUS-i4-PAK-5 | Tube | 1 Channel | SiC | N-Channel | 600 V | 15 A | 165 mOhns | 3 V | 40 nC | CoolMOS | |||||
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GET PRICE |
62
In-stock
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IXYS | MOSFET 60V/220A TrenchT3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 60 V | 220 A | 4 mOhms | 2 V | 136 nC | Enhancement | HiPerFET | ||
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GET PRICE |
30
In-stock
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IXYS | MOSFET 60V/270A TrenchT3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 60 V | 270 A | 3.1 mOhms | 2 V | 200 nC | Enhancement | HiPerFET | ||
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GET PRICE |
41
In-stock
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IXYS | MOSFET 60V/270A TrenchT3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 60 V | 270 A | 3.1 mOhms | 2 V | 200 nC | Enhancement | HiPerFET | ||
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GET PRICE |
2,798
In-stock
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Wolfspeed / Cree | MOSFET 1000V 65 mOhm G3 SiC MOSFET TO-247-4 | - 4 V, + 15 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1000 V | 35 A | 65 mOhms | 1.8 V | 35 nC | Enhancement | |||
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GET PRICE |
792
In-stock
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Wolfspeed / Cree | MOSFET SiC Power MOSFET 1700V, 72A | - 5 V, + 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1700 V | 72 A | 45 mOhms | 2 V | 188 nC | Enhancement | |||
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GET PRICE |
554
In-stock
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Wolfspeed / Cree | MOSFET 1000V 120mOhm G3 SiC MOSFET TO-247-4 | - 4 V, + 15 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1 kV | 22 A | 120 mOhms | 1.8 V | 21.5 nC | Enhancement | |||
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GET PRICE |
408
In-stock
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Wolfspeed / Cree | MOSFET SIC MOSFET 1200V 75 mOhm | - 4 V, + 15 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1.2 kV | 30 A | 75 mOhms | 1.7 V | 51 nC | Enhancement | |||
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GET PRICE |
2,470
In-stock
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Wolfspeed / Cree | MOSFET SIC MOSFET 1200V RDS ON 280 mOhm | - 10 V to + 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1200 V | 10 A | 280 mOhms | 2.8 V | 5.6 nC | Enhancement | Z-FET | ||
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GET PRICE |
8,070
In-stock
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Wolfspeed / Cree | MOSFET SIC MOSFET 1200V RDS ON 25 mOhm | - 10 V, + 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1200 V | 90 A | 25 mOhms | 2.4 V | 406 nC | Enhancement | |||
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GET PRICE |
5,600
In-stock
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Wolfspeed / Cree | MOSFET SiC Power MOSFET 1200V, 60A | - 10 V, + 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1200 V | 60 A | 40 mOhms | 2.8 V | 283 nC | Enhancement | |||
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GET PRICE |
6,264
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET 900V, 65mOhm | - 8 V, + 18 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 900 V | 36 A | 90 mOhms | 1.8 V | 30.4 nC | Enhancement | |||
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GET PRICE |
1,000
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET 900V, 65mOhm | - 8 V, + 18 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 900 V | 35 A | 90 mOhms | 1.8 V | 30 nC | Enhancement | |||
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GET PRICE |
1,348
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET/ Reel 900V, 120 mOhm | - 8 V, + 18 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Reel | 1 Channel | SiC | N-Channel | 900 V | 22 A | 170 mOhms | 1.8 V | 17.3 nC | Enhancement | |||
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GET PRICE |
376
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET 900V, 120 mOhm | - 8 V, + 18 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 900 V | 22 A | 170 mOhms | 1.8 V | 17.3 nC | Enhancement | |||
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GET PRICE |
481
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET 900V, 120mOhm | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 900 V | 23 A | 120 mOhms | 2.1 V | 17.3 nC | Enhancement | ||||
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GET PRICE |
1,343
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET 900V, 280 mOhm | - 8 V, + 18 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 900 V | 11 A | 385 mOhms | 1.8 V | 9.5 nC | Enhancement | |||
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GET PRICE |
90
In-stock
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Microsemi | MOSFET Power MOSFET - SiC | Bulk | SiC | ||||||||||||||||
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GET PRICE |
1,461
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET/ Reel 900V, 280 mOhm | - 8 V, + 18 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Reel | 1 Channel | SiC | N-Channel | 900 V | 11 A | 385 mOhms | 1.8 V | 9.5 nC | Enhancement | |||
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GET PRICE |
197
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET 900V, 280mOhm | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 900 V | 11.5 A | 280 mOhms | 2.1 V | 9.5 nC | Enhancement | ||||
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GET PRICE |
30
In-stock
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Microsemi | MOSFET Power MOSFET - SiC | Bulk | SiC | ||||||||||||||||
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GET PRICE |
30
In-stock
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Microsemi | MOSFET Power MOSFET - SiC | Bulk | SiC | ||||||||||||||||
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GET PRICE |
590
In-stock
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STMicroelectronics | MOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ.... | - 10 V to + 25 V | Through Hole | HiP247-3 | - 55 C | + 200 C | Tube | 1 Channel | SiC | N-Channel | 1.2 kV | 65 A | 52 mOhms | 1.8 V | 122 nC | Enhancement | |||
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GET PRICE |
1,200
In-stock
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STMicroelectronics | MOSFET 1200V silicon carbide MOSFET | - 10 V, + 25 V | Through Hole | HiP247-3 | - 55 C | + 200 C | Tube | 1 Channel | SiC | N-Channel | 1.2 kV | 45 A | 80 mOhms | 2.6 V | 105 nC | ||||
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GET PRICE |
90
In-stock
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IXYS | MOSFET SiC Power MOSFET | - 5 V to + 20 V | Chassis Mount | SOT-227-4 | - 40 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1.2 kV | 68 A | 25 mOhms | 2 V | 161 nC | Enhancement | |||
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GET PRICE |
288
In-stock
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STMicroelectronics | MOSFET Silicon carbide Power MOSFET 1200 V, 10 A, 550 mOhm (typ... | - 10 V to + 25 V | Through Hole | HiP247-3 | - 55 C | + 200 C | Tube | 1 Channel | SiC | N-Channel | 1.2 kV | 12 A | 500 mOhms | 1.8 V | 22 nC | Enhancement | |||
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GET PRICE |
40
In-stock
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IXYS | MOSFET SiC Power MOSFET | - 5 V to + 20 V | Screw Mount | SOT-227-4 | - 40 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1.2 kV | 48 A | 40 mOhms | 2.4 V | 115 nC | Enhancement |
