- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Qg - Gate Charge :
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20 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
272
In-stock
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onsemi | MOSFET GAN 600V 9A 290MO | 18 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | GaN | N-Channel | 600 V | 9 A | 350 mOhms | 1.6 V | 6.2 nC | Enhancement | |||
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GET PRICE |
99
In-stock
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onsemi | MOSFET GAN 600V 17A 150MO | 18 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | GaN | N-Channel | 600 V | 17 A | 340 mOhms | 1.6 V | 6.2 nC | Enhancement | |||
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GET PRICE |
524
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 12A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | GaN | N-Channel | 600 V | 12 A | 220 mOhms | 2.5 V | 35 nC | Enhancement | CoolMOS | ||
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GET PRICE |
919
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 6.1A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | GaN | N-Channel | 600 V | 6.1 A | 600 mOhms | 3.5 V | 21 nC | Enhancement | CoolMOS | ||
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GET PRICE |
12,110
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 6.1A DPAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | GaN | N-Channel | 600 V | 6.1 A | 600 mOhms | Enhancement | CoolMOS | ||||
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GET PRICE |
100
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 100A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | GaN | N-Channel | 100 V | 100 A | 6.2 mOhms | Enhancement | |||||
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GET PRICE |
900
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 4.5A IPAK-3 CoolMOS C3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | GaN | N-Channel | 650 V | 4.5 A | 950 mOhms | Enhancement | CoolMOS | ||||
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GET PRICE |
134
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 11A I2PAK-3 CoolMOS S5 | 20 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | GaN | N-Channel | 600 V | 11 A | 380 mOhms | Enhancement | CoolMOS | ||||
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GET PRICE |
1,009
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 800mA IPAK-3 CoolMOS C3 | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | GaN | N-Channel | 650 V | 800 mA | 6 Ohms | Enhancement | CoolMOS | ||||
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GET PRICE |
194
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 12A TO247-3 CoolMOS CP | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | GaN | N-Channel | 600 V | 12 A | 250 mOhms | Enhancement | CoolMOS | ||||
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GET PRICE |
385
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 69A IPAK-3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | GaN | N-Channel | 100 V | 69 A | 11.8 mOhms | Enhancement | |||||
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GET PRICE |
167
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 6.8A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | GaN | N-Channel | 600 V | 6.8 A | 520 mOhms | Enhancement | CoolMOS | ||||
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GET PRICE |
870
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 70A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | GaN | N-Channel | 40 V | 70 A | 5.2 mOhms | Enhancement | |||||
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GET PRICE |
13
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 35A IPAK-3 OptiMOS 3 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | GaN | N-Channel | 30 V | 35 A | 10.5 mOhms | Enhancement | OptiMOS | ||||
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GET PRICE |
5
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 2.9A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | GaN | N-Channel | 60 V | 2.9 A | 120 mOhms | Enhancement | |||||
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GET PRICE |
9
In-stock
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Infineon Technologies | MOSFET P-Ch -250V 140mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | GaN | P-Channel | - 250 V | - 140 mA | 8 Ohms | - 2 V | - 4.8 nC | Enhancement | |||
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GET PRICE |
307
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 30A IPAK-3 OptiMOS 3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | GaN | N-Channel | 30 V | 30 A | 13.5 mOhms | Enhancement | OptiMOS | ||||
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GET PRICE |
1
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 90A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | GaN | N-Channel | 40 V | 90 A | 3.8 mOhms | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 600V 7.3A IPAK-3 CoolMOS S5 | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | GaN | N-Channel | 600 V | 7.3 A | 600 mOhms | Enhancement | CoolMOS | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 80A TO220-3 OptiMOS-T | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | GaN | N-Channel | 40 V | 80 A | 5.7 mOhms | Enhancement | OptiMOS |
