- Package / Case :
- Rds On - Drain-Source Resistance :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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524
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 12A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | GaN | N-Channel | 600 V | 12 A | 220 mOhms | 2.5 V | 35 nC | Enhancement | CoolMOS | |||
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919
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 6.1A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | GaN | N-Channel | 600 V | 6.1 A | 600 mOhms | 3.5 V | 21 nC | Enhancement | CoolMOS | |||
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GET PRICE |
12,110
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 6.1A DPAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | GaN | N-Channel | 600 V | 6.1 A | 600 mOhms | Enhancement | CoolMOS | ||||
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167
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 6.8A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | GaN | N-Channel | 600 V | 6.8 A | 520 mOhms | Enhancement | CoolMOS |
