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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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STMicroelectronics MOSFET N-CH 1.2KV TO247-3 TO-247-3 - Tube SiCFET (Silicon Carbide) Through Hole -55°C ~ 200°C (TJ) Active HiP247™ 0 1 N-Channel 1200V 65A (Tc) 69 mOhm @ 40A, 20V 3V @ 1mA 122nC @ 20V 1900pF @ 400V 20V +25V, -10V 318W (Tc)
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STMicroelectronics MOSFET N-CH 1200V 45A HIP247 TO-247-3 - Tube SiCFET (Silicon Carbide) Through Hole -55°C ~ 200°C (TJ) Active HiP247™ 0 1 N-Channel 1200V 40A (Tc) 100 mOhm @ 20A, 20V 2.6V @ 1mA (Typ) 105nC @ 20V 1700pF @ 400V 20V +25V, -10V 270W (Tc)
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STMicroelectronics MOSFET N-CH 1200V 20A HIP247 TO-247-3 - Tube SiCFET (Silicon Carbide) Through Hole -55°C ~ 200°C (TJ) Active HiP247™ 0 1 N-Channel 1200V 20A (Tc) 290 mOhm @ 10A, 20V 3.5V @ 1mA 45nC @ 20V 650pF @ 400V 20V +25V, -10V 175W (Tc)
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STMicroelectronics MOSFET N-CH 1.2KV TO247-3 TO-247-3 - Tube SiCFET (Silicon Carbide) Through Hole -55°C ~ 200°C (TJ) Active HiP247™ 0 1 N-Channel 1200V 12A (Tc) 690 mOhm @ 6A, 20V 3.5V @ 250µA 22nC @ 20V 290pF @ 400V 20V +25V, -10V 150W (Tc)
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