- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Applied Filters :
23 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
1,000
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 31V~40V SO-8 T&R 2.5K | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 8.6 A, 8.6 A | 10 mOhms, 10 mOhms | 1 V, 1 V | 33 nC, 33 nC | Enhancement | |||
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GET PRICE |
3,909
In-stock
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Diodes Incorporated | MOSFET Enh Mode FET 41V to 60V TO263 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.9 mOhms | 2 V | 95.4 nC | Enhancement | |||
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GET PRICE |
2,473
In-stock
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Diodes Incorporated | MOSFET 100V 175c N-Ch FET 28mOhm 10V 55A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 28 mOhms | 2 V | 36 nC | Enhancement | |||
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GET PRICE |
3,967
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode Fet 60Vdss 20Vgss 60W | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 59 A | 10 mOhms | 1.4 V | 33.5 nC | Enhancement | |||
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GET PRICE |
2,085
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 60Vdss 20Vgss 100A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 22 A | 3.1 mOhms | 96.3 nC | Enhancement | ||||
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GET PRICE |
2,500
In-stock
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Diodes Incorporated | MOSFET 60V 175c N-Ch FET 5.5mOhm 10Vgs 100A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 10 mOhms | 1 V | 47.1 nC | Enhancement | |||
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GET PRICE |
2,495
In-stock
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Diodes Incorporated | MOSFET 60V 175c N-Ch FET 3.1mOhm 10Vgs 100A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.1 mOhms | 2 V | 95.4 nC | Enhancement | |||
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GET PRICE |
2,490
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 100Vds 20Vgs 125W | 10 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 28 mOhms | 2.5 V | 36 nC | Enhancement | |||
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GET PRICE |
2,244
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 80V 20Vgss 80A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 50 A | 12.1 mOhms | 1 V | 34 nC | Enhancement | |||
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GET PRICE |
2,300
In-stock
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Diodes Incorporated | MOSFET 60V 175c N-Ch FET 8mOhm 10Vgs 100A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 13.5 A | 6.4 mOhms | 1 V | 41.3 nC | Enhancement | |||
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GET PRICE |
2,431
In-stock
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Diodes Incorporated | MOSFET 60V 175c N-Ch FET 8mOhm 10Vgs 70A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 70 A | 12 mOhms | 1 V | 41.3 nC | Enhancement | |||
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GET PRICE |
1,500
In-stock
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Diodes Incorporated | MOSFET 40V 175c N-Ch FET 8.6mOhm 10Vgs 45A | 20 V | SMD/SMT | PowerDI5060-C-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 4.9 mOhms | 2 V | 41.9 nC | Enhancement | |||
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GET PRICE |
2,500
In-stock
|
Diodes Incorporated | MOSFET 40V 175c N-Ch FET 3.7mOHm 10V 100A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 20.9 A | 3.7 mOhms | 2 V | 49.1 nC | Enhancement | |||
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GET PRICE |
2,300
In-stock
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Diodes Incorporated | MOSFET 40V N-Ch Enh FET Low Rdson | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.7 mOhms | 4 V | 68.6 nC | Enhancement | |||
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GET PRICE |
2,500
In-stock
|
Diodes Incorporated | MOSFET 40V 175c N-Ch FET 8.6mOhm 10Vgs 45A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 7.6 mOhms | 2 V | 41.9 nC | Enhancement | |||
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GET PRICE |
2,402
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 37 A | 12 mOhms | 1 V | 17 nC | Enhancement | |||
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GET PRICE |
2,083
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 23.6 A | - 70 mOhms | - 3 V | 25 nC | Enhancement | |||
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GET PRICE |
779
In-stock
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Diodes Incorporated | MOSFET 40V 175c N-Ch FET 3mOhm 10Vgs 100A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.5 mOhms | 2 V | 68.6 nC | Enhancement | |||
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GET PRICE |
7,500
In-stock
|
Diodes Incorporated | MOSFET 40V 175c N-Ch Enh 20Vgss 7.3mOhm 70A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 70 A | 5 mOhms | 1 V | 29.1 nC | Enhancement | |||
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VIEW | Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | N-Channel | 60 V, 60 V | 7.6 A, 7.6 A | 15 mOhms, 15 mOhms | 1 V, 1 V | 17 nC, 17 nC | Enhancement | |||||
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VIEW | Diodes Incorporated | MOSFET 60V 175c N-Ch FET 20Vgss 2.6W 2090pF | 10 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 8 mOhms | 3 V | 41.3 nC | Enhancement | PowerDI | |||
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GET PRICE |
7,500
In-stock
|
Diodes Incorporated | MOSFET 40V N-Ch Enh Mode AEC-Q101 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 140 A | 6 mOhms | 2 V | 51 nC | Enhancement | |||
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VIEW | Diodes Incorporated | MOSFET 60V 175c N-Ch FET 20Vgss 2.6W 2090pF | 10 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 8 mOhms | 3 V | 41.3 nC | Enhancement |
