- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
18 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
12,000
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 190A 3.7mOhm 100nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 2.7 mOhms | 4 V | 100 nC | ||||||
|
1,262
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 2.3 mOhms | 3.5 V | 180 nC | ||||||
|
2,926
In-stock
|
IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 2.7 mOhms | 2 V | 150 nC | Enhancement | |||||
|
954
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 180 A | 2.3 mOhms | 2 V | 183 nC | Enhancement | |||||
|
500
In-stock
|
IR / Infineon | MOSFET Automotive MOSFET 10 hm, 143 nC Qg, D2Pak | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 3.9 mOhms | 143 nC | Enhancement | ||||||
|
141
In-stock
|
Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 4.5mOhms 180nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 180 A | 4.5 mOhms | 180 nC | Enhancement | ||||||
|
59
In-stock
|
IXYS | MOSFET 180 Amps 150V 0.01 Ohm Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 180 A | 10 mOhms | 5 V | 240 nC | Enhancement | PolarHT | ||||
|
239
In-stock
|
Infineon Technologies | MOSFET 40V, 90A, 2.5 mOhm 89 nC Qg, I-Pak | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 2.4 mOhms | 3.9 V | 134 nC | Enhancement | StrongIRFET | |||||
|
30
In-stock
|
IXYS | MOSFET 180 Amps 150V 0.011 Ohm Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 180 A | 11 mOhms | Enhancement | HyperFET | ||||||
|
2
In-stock
|
IR / Infineon | MOSFET 100V 180A 4.3 mOhm Auto Lgc Lvl MOSFET | 16 V | SMD/SMT | TO-252-3 | + 175 C | Tube | Si | N-Channel | 100 V | 180 A | 4.5 mOhms | 87 nC | |||||||||
|
17
In-stock
|
IXYS | MOSFET 180 Amps 150V 0.011 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 180 A | 11 mOhms | 5 V | 240 nC | Enhancement | Polar, HiPerFET | ||||
|
1,982
In-stock
|
STMicroelectronics | MOSFET N-Ch 80 V 2.1 mOhm 180 A STripFET VI DG | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 180 A | 2.5 mOhms | 2 V to 4 V | 193 nC | ||||||
|
VIEW | Infineon Technologies | MOSFET 100V 170A 4.7 mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 3.9 mOhms | 143 nC | |||||||||
|
58
In-stock
|
IXYS | MOSFET MOSFET Id180 BVdass100 | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 6.4 mOhms | Enhancement | ||||||||
|
VIEW | IXYS | MOSFET 180 Amps 100V 6.1 Rds | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 6.4 mOhms | Enhancement | ||||||||
|
VIEW | IXYS | MOSFET 180 Amps 100V 6.1 Rds | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 6.4 mOhms | Enhancement | ||||||||
|
VIEW | IXYS | MOSFET 180 Amps 100V 6.1 Rds | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 6.4 mOhms | Enhancement | ||||||||
|
904
In-stock
|
onsemi | MOSFET NCH 180A 100V | 20 V | Through Hole | TO-220-3 | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 3.5 mOhms | 2 V | 95 nC | Enhancement |