PART NO.	PRICE		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
AUIRFS8407-7P	1+ $2.940 10+ $2.490 100+ $2.160 250+ $2.050	PDF RFQ	1,064 In-stock	Infineon Technologies	MOSFET 40V SGL N-CH HEXFET 1.3mOhms	20 V	SMD/SMT	TO-263-7	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	40 V	240 A	1.3 mOhms	2.2 V to 3.9 V	150 nC	Enhancement	CoolIRFet
IXFZ520N075T2	1+ $31.650 5+ $31.330 10+ $29.200 25+ $27.890	PDF RFQ	14 In-stock	IXYS	MOSFET TrenchT2 HiperFETs Gate TrenchT2 MOSFET	20 V	SMD/SMT	DE-475-6	- 55 C	+ 175 C	Tube		Si	N-Channel	75 V	465 A	1.3 mOhms	4 V	545 nC	Enhancement	TrenchT2, GigaMOS, HiperFET
CSD18536KCS	1+ $4.270 10+ $3.830 25+ $3.690 100+ $3.140	PDF RFQ	172 In-stock	Texas instruments	MOSFET CSD18536KCS 60 V N-Channel NexFET? Power MOSFET...	20 V	Through Hole	TO-220-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	60 V	200 A	1.3 mOhms	1.4 V	108 nC	Enhancement
MMIX1T550N055T2	1+ $34.970 5+ $34.610 10+ $32.260 25+ $30.810	PDF RFQ	320 In-stock	IXYS	MOSFET SMPD MOSFETs Power Device	20 V	SMD/SMT	SMPD-24	- 55 C	+ 175 C	Tube		Si	N-Channel	55 V	550 A	1.3 mOhms	3.8 V	595 nC	Enhancement	TrenchT2, GigaMOS