- Mounting Style :
- Package / Case :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,835
In-stock
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Fairchild Semiconductor | MOSFET TO-251AA N-Ch Power | 10 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 50 V | 14 A | 100 mOhms | Enhancement | ||||||
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3,174
In-stock
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Fairchild Semiconductor | MOSFET TO-252AA N-Ch Power | 10 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 50 V | 14 A | 100 mOhms | Enhancement | ||||||
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30,070
In-stock
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STMicroelectronics | MOSFET N-Ch 60 Volt 16 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 16 A | 100 mOhms | Enhancement | ||||||
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1,682
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel QFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 13.6 A | 100 mOhms | Enhancement | QFET | |||||
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GET PRICE |
18,060
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 100mOhm 18A 18nC Qg for Aud | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 18 A | 100 mOhms | 18 nC | Enhancement | ||||
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1,381
In-stock
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STMicroelectronics | MOSFET N-Ch 60 Volt 12 Amp | 16 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 12 A | 100 mOhms | Enhancement | ||||||
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401
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 24A 100mOhm 57nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 24 A | 100 mOhms | 5.5 V | 57 nC | Enhancement | ||||
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343
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 100mOhms 57nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 24 A | 100 mOhms | 57 nC | Enhancement |
