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- Id - Continuous Drain Current :
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- Rds On - Drain-Source Resistance :
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- Qg - Gate Charge :
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- 95 nC (1)
63 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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12,000
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 190A 3.7mOhm 100nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 2.7 mOhms | 4 V | 100 nC | |||||
|
|
1,025
In-stock
|
Fairchild Semiconductor | MOSFET PT7 60V 4.1MOHM TO-220F | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 60 V | 77 A | 4.1 mOhms | 4 V | 69 nC | PowerTrench | |||||
|
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4,351
In-stock
|
Infineon Technologies | MOSFET 100V SINGLE N-CH 28.5mOhms 39nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 35 A | 22.5 mOhms | 4 V | 39 nC | |||||
|
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436
In-stock
|
Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 2.1mOhms 200nC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 293 A | 1.5 mOhms | 4 V | 200 nC | |||||
|
|
3,298
In-stock
|
IR / Infineon | MOSFET 100V 1 N-CH HEXFET 10mOhms 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 88 A | 8 mOhms | 4 V | 120 nC | Enhancement | ||||
|
|
3,815
In-stock
|
Infineon Technologies | MOSFET 80V 1 N-CH HEXFET 29mOhms 37nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 38 A | 24 mOhms | 4 V | 37 nC | Enhancement | ||||
|
|
1,816
In-stock
|
Infineon Technologies | MOSFET MOSFET, 100V, 64A, 1 50 nC Qg, TO-262 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 61 A | 13.9 mOhms | 4 V | 58 nC | Enhancement | ||||
|
|
2,247
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 16mOhms 59.3nC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 64 A | 16 mOhms | 4 V | 89 nC | Enhancement | ||||
|
|
4,084
In-stock
|
IR / Infineon | MOSFET 75V 1 N-CH HEXFET 12.6mOhms 89nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 62 A | 12.6 mOhms | 4 V | 89 nC | Enhancement | ||||
|
|
956
In-stock
|
IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 160 A | 5.3 mOhms | 4 V | 120 nC | |||||
|
|
154
In-stock
|
IXYS | MOSFET 550Amps 55V | 20 V | SMD/SMT | DE-475-6 | - 55 C | + 175 C | Tube | Si | N-Channel | 55 V | 550 A | 1 MOhms | 4 V | 595 nC | Enhancement | TrenchT2, GigaMOS | ||||
|
|
1,607
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 44mOhms 47.3nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 33 A | 44 mOhms | 4 V | 47.3 nC | Enhancement | ||||
|
|
435
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel PwrTrench 100V 164A 4.5mOhm | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 3.8 mOhms | 4 V | 54 nC | Enhancement | ||||
|
|
692
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 160A 5.3mOhm 120nCAC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 160 A | 5.3 mOhms | 4 V | 120 nC | |||||
|
|
919
In-stock
|
STMicroelectronics | MOSFET Low charge STripFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 18 A | 125 mOhms | 4 V | 28 nC | Enhancement | ||||
|
|
556
In-stock
|
STMicroelectronics | MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.4 mOhms | 4 V | 100 nC | Enhancement | ||||
|
|
159
In-stock
|
IXYS | MOSFET TRENCHT2 HIPERFET PWR MOSFET 75V 340A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 340 A | 3.2 mOhms | 4 V | 300 nC | Enhancement | HiPerFET | |||
|
|
621
In-stock
|
IXYS | MOSFET 170 Amps 75V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 5.4 mOhms | 4 V | 109 nC | Enhancement | TrenchT2 | |||
|
|
1,192
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 39mOhms 37nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 31 A | 39 mOhms | 4 V | 37 nC | Enhancement | ||||
|
|
GET PRICE |
4,235
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 27A 52mOhm 62.7nCAC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 33 A | 52 mOhms | 4 V | 94 nC | ||||
|
|
766
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 30A 75mOhm 82nCAC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 30 A | 75 mOhms | 4 V | 82 nC | Enhancement | ||||
|
|
275
In-stock
|
Fairchild Semiconductor | MOSFET PT7 60V 2.5MOHM TO-220 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 195 A | 2.67 mOhms | 4 V | 76 nC | Enhancement | PowerTrench | |||
|
|
GET PRICE |
5,270
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 49A 40mOhm 156nCAC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 50 A | 40 mOhms | 4 V | 156 nC | Enhancement | |||
|
|
897
In-stock
|
Infineon Technologies | MOSFET MOSFT 60V 72A 12mOhm 73.3nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 72 A | 12 mOhms | 4 V | 73.3 nC | |||||
|
|
539
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 175A 4.7mOhm 150nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 175 A | 4.7 mOhms | 4 V | 150 nC | |||||
|
|
832
In-stock
|
Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 9mOhms 56nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 7.34 mOhms | 4 V | 56 nC | |||||
|
|
306
In-stock
|
Infineon Technologies | MOSFET MOSFT 75V 90A 4.5mOhm 180nC Qg | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 90 A | 4.5 mOhms | 4 V | 180 nC | |||||
|
|
651
In-stock
|
Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 9mOhms 56nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 7.34 mOhms | 4 V | 56 nC | |||||
|
|
1,271
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 15A 115mOhm 29.3nC | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 16 A | 115 mOhms | 4 V | 44 nC | |||||
|
|
477
In-stock
|
Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 26mOhms 74nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 42 A | 26 mOhms | 4 V | 74 nC | Enhancement |
