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Vgs - Gate-Source Voltage :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
AUIRLZ44ZL
1+
$1.820
10+
$1.540
100+
$1.240
500+
$1.080
RFQ
679
In-stock
Infineon Technologies MOSFET AUTO 55V 1 N-CH HEXFET 13.5mOhms 16 V Through Hole TO-262-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 55 V 51 A 13.5 mOhms 3 V 24 nC  
IRLZ44ZSPBF
1+
$2.010
10+
$1.710
100+
$1.370
500+
$1.190
RFQ
670
In-stock
IR / Infineon MOSFET 55V 1 N-CH HEXFET 13.5mOhms 24nC 16 V SMD/SMT TO-263-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 55 V 51 A 22.5 mOhms 1 V to 3 V 24 nC Enhancement
IRFR3708PBF
1+
$1.260
10+
$1.070
100+
$0.826
500+
$0.730
RFQ
209
In-stock
IR / Infineon MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nC 12 V SMD/SMT TO-252-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 30 V 61 A 14 mOhms 0.6 V to 2 V 24 nC Enhancement
AUIRLZ44ZS
VIEW
RFQ
IR / Infineon MOSFET AUTO 55V 1 N-CH HEXFET 13.5mOhms 16 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 55 V 51 A 13.5 mOhms 3 V 24 nC  
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