- Mounting Style :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
20 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,926
In-stock
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IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 2.7 mOhms | 2 V | 150 nC | Enhancement | ||||
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756
In-stock
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Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 75 A | 17 mOhms | 3 V | 150 nC | Enhancement | ||||
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1,064
In-stock
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Infineon Technologies | MOSFET 40V SGL N-CH HEXFET 1.3mOhms | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 240 A | 1.3 mOhms | 2.2 V to 3.9 V | 150 nC | Enhancement | CoolIRFet | |||
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1,992
In-stock
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IR / Infineon | MOSFET Auto 40V N-Ch FET 1.4mOhm 195A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.8 mOhms | 2 V to 4 V | 150 nC | Enhancement | CoolIRFet | |||
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549
In-stock
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Fairchild Semiconductor | MOSFET 80V 2.7mohm TO220 3L NON JEDEC GREEN EMC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 242 A | 1.96 mOhms | 3.8 V | 150 nC | Enhancement | ||||
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679
In-stock
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IXYS | MOSFET Trench T2 HiperFET Power MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 110 A | 11 mOhms | 4.5 V | 150 nC | Enhancement | HiPerFET | |||
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304
In-stock
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IXYS | MOSFET POLAR HT MOSFET 150V 120A | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 120 A | 16 mOhms | 5 V | 150 nC | Enhancement | PolarHT | |||
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539
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 175A 4.7mOhm 150nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 175 A | 4.7 mOhms | 4 V | 150 nC | |||||
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308
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 4.7mOhms 150nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 135 A | 4.7 mOhms | 2 V to 4 V | 150 nC | Enhancement | ||||
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59
In-stock
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IXYS | MOSFET 130Amps 200V | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 130 A | 16 mOhms | 5 V | 150 nC | Enhancement | ||||
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52
In-stock
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IXYS | MOSFET 110 Amps 150V | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 150 A | 13 mOhms | 4.5 V | 150 nC | Enhancement | ||||
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74
In-stock
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IXYS | MOSFET 110Amps 150V | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 110 A | 11 mOhms | 2.5 V | 150 nC | Enhancement | ||||
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116
In-stock
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IR / Infineon | MOSFET Auto 40V N-Ch FET 1.4mOhm 195A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.8 mOhms | 2 V to 4 V | 150 nC | Enhancement | CoolIRFet | |||
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280
In-stock
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IR / Infineon | MOSFET Auto 40V N-Ch FET 1.4mOhm 195A | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.8 mOhms | 2 V to 4 V | 150 nC | Enhancement | CoolIRFet | |||
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16
In-stock
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IXYS | MOSFET DUAL PHASE LEGCONFIG 150V 53A MOSFET | 30 V | Through Hole | ISOPLUS-i4-PAK-5 | - 55 C | + 175 C | Tube | 2 Channel | Si | N-Channel | 150 V | 53 A | 20 mOhms | 4.5 V | 150 nC | TrenchT2 | ||||
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275
In-stock
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IR / Infineon | MOSFET 40V 295A 1.8mOhm Automotive MOSFET | Through Hole | TO-262-3 | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 295 A | 1.8 mOhms | 150 nC | ||||||||
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VIEW | IR / Infineon | MOSFET 100V 190A 4 mOhm Automotive MOSFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 190 A | 3.3 mOhms | 2 V to 4 V | 150 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 120 Amps 150V 0.016 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 120 A | 16 mOhms | 5 V | 150 nC | Enhancement | PolarHT | |||
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275
In-stock
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IR / Infineon | MOSFET 75V 1 N-CH HEXFET 7mOhms 150nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 105 A | 7 mOhms | 2 V to 4 V | 150 nC | Enhancement | ||||
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55
In-stock
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IR / Infineon | MOSFET 40V, 195A, 1.8 mOhm 150 nC Qg, D2-Pak | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.8 mOhms | 2.2 V to 3.9 V | 150 nC | Enhancement | StrongIRFET |
