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Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPP083N10N5AKSA1
1+
$1.520
10+
$1.290
100+
$1.040
500+
$0.902
RFQ
1,852
In-stock
Infineon Technologies MOSFET N-Ch 100V 73A TO220-3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 73 A 11 mOhms 2.2 V 30 nC Enhancement  
STP100N6F7
1+
$1.730
10+
$1.470
100+
$1.170
500+
$1.030
RFQ
1,571
In-stock
STMicroelectronics MOSFET 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 60 V 100 A 5.6 mOhms 2 V 30 nC Enhancement  
IRFR24N15DPBF
1+
$1.390
10+
$1.190
100+
$0.911
500+
$0.805
RFQ
825
In-stock
Infineon Technologies MOSFET 150V 1 N-CH HEXFET 95mOhms 30nC 30 V SMD/SMT TO-252-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 150 V 24 A 82 mOhms 5 V 30 nC Enhancement  
STF100N6F7
1+
$1.840
10+
$1.570
100+
$1.250
500+
$1.100
RFQ
713
In-stock
STMicroelectronics MOSFET 20 V Through Hole TO-220FP-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 60 V 46 A 5.6 mOhms 2 V 30 nC Enhancement  
STB100N6F7
1+
$1.990
10+
$1.690
100+
$1.350
500+
$1.190
RFQ
311
In-stock
STMicroelectronics MOSFET 20 V SMD/SMT TO-263-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 60 V 100 A 5.6 mOhms 2 V 30 nC Enhancement  
IPS060N03LG AKMA1
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RFQ
12,620
In-stock
Infineon Technologies MOSFET N-Ch 30V 50A IPAK-3 OptiMOS 3 20 V Through Hole TO-251-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 30 V 50 A 5 mOhms 1 V 30 nC Enhancement OptiMOS
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