- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Tradename :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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246
In-stock
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IXYS | MOSFET 170 Amps 150V 0.013 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 150 A | 13 mOhms | 5 V | 190 nC | Enhancement | PolarHT, HiPerFET | |||
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193
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH 3.3mOhm HEXFET 75A ID | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 220 A | 3.3 mOhms | 190 nC | Enhancement | |||||
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128
In-stock
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 3.3mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 210 A | 2.6 mOhms | 4 V | 190 nC | Enhancement | ||||
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99
In-stock
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IXYS | MOSFET 150 Amps 150V 0.013 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 150 A | 13 mOhms | 5 V | 190 nC | Enhancement | PolarHT | |||
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46
In-stock
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IXYS | MOSFET 150 Amps 150V 0.013 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 150 A | 13 mOhms | 5 V | 190 nC | Enhancement | PolarHT |
