- Id - Continuous Drain Current :
-
- 100 A (2)
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- 51 A (2)
- 57 A (1)
- 59 A (1)
- 60 A (1)
- 62 A (1)
- 70 A (2)
- 75 A (2)
- 80 A (2)
- 84 A (1)
- 86 A (2)
- 88 A (1)
- 89 A (1)
- 90 A (2)
- 94 A (1)
- Rds On - Drain-Source Resistance :
-
- 0.0011 Ohms (1)
- 0.0016 Ohms (1)
- 0.0045 Ohms (1)
- 1.2 mOhms (1)
- 1.21 mOhms (1)
- 1.7 mOhms (1)
- 1.8 mOhms (1)
- 10 mOhms (1)
- 11 mOhms (1)
- 12 mOhms (2)
- 13.6 mOhms (1)
- 14 mOhms (1)
- 18 mOhms (2)
- 2.2 mOhms (1)
- 2.3 mOhms (1)
- 2.5 mOhms (2)
- 2.6 mOhms (1)
- 2.7 mOhms (1)
- 2.8 mOhms (1)
- 2.9 mOhms (1)
- 20 mOhms (1)
- 22.5 mOhms (1)
- 25 mOhms (1)
- 26.5 mOhms (1)
- 29 mOhms (1)
- 3.1 mOhms (1)
- 3.3 mOhms (2)
- 3.7 mOhms (1)
- 33 mOhms (1)
- 4 mOhms (2)
- 4.5 mOhms (1)
- 4.6 mOhms (2)
- 4.9 mOhms (1)
- 44 mOhms (1)
- 5 mOhms (1)
- 5.4 mOhms (1)
- 5.6 mOhms (1)
- 50 mOhms (1)
- 6.1 mOhms (1)
- 6.4 mOhms (1)
- 6.6 mOhms (1)
- 60 mOhms (1)
- 7 mOhms (2)
- 7.34 mOhms (1)
- 7.5 mOhms (1)
- 78 mOhms (1)
- 8.4 mOhms (1)
- 8.5 mOhms (2)
- 82 mOhms (1)
- 9.4 mOhms (1)
- 9.6 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 100 nC (2)
- 109 nC (1)
- 112 nC (1)
- 120 nC (2)
- 135 nC (1)
- 136 nC (1)
- 145 nC (1)
- 150 nC (3)
- 160 nC (2)
- 165 nC (1)
- 180 nC (1)
- 182 nC (1)
- 200 nC (2)
- 230 nC (1)
- 24 nC (1)
- 256 nC (1)
- 290 nC (1)
- 30 nC (1)
- 300 nC (1)
- 31 nC (1)
- 38 nC (1)
- 40 nC (1)
- 42 nC (1)
- 43 nC (1)
- 47.3 nC (1)
- 56 nC (1)
- 58 nC (1)
- 60 nC (1)
- 63 nC (1)
- 70 nC (3)
- 71 nC (1)
- 79 nC (2)
- 82 nC (1)
59 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
90
In-stock
|
IXYS | MOSFET 60V/270A TrenchT3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 270 A | 3.1 mOhms | 2 V | 200 nC | Enhancement | HiPerFET | |||
|
|
2,926
In-stock
|
IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 2.7 mOhms | 2 V | 150 nC | Enhancement | ||||
|
|
3,130
In-stock
|
IR / Infineon | MOSFET 75V 1 N-CH HEXFET 4.5mOhms 180nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 4.5 mOhms | 180 nC | Enhancement | |||||
|
|
3,031
In-stock
|
IR / Infineon | MOSFET Auto 40V N-Ch FET 0.97mOhm 195A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.2 mOhms | 2.2 V to 3.9 V | 300 nC | Enhancement | CoolIRFet | |||
|
|
1,992
In-stock
|
IR / Infineon | MOSFET Auto 40V N-Ch FET 1.4mOhm 195A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.8 mOhms | 2 V to 4 V | 150 nC | Enhancement | CoolIRFet | |||
|
|
1,607
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 44mOhms 47.3nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 33 A | 44 mOhms | 4 V | 47.3 nC | Enhancement | ||||
|
|
795
In-stock
|
Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 4.6 mOhms | 1.5 V | 100 nC | Enhancement | ||||
|
|
799
In-stock
|
Siliconix / Vishay | MOSFET N Ch 80Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.6 mOhms | 2.5 V | 165 nC | Enhancement | ||||
|
|
800
In-stock
|
Siliconix / Vishay | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.21 mOhms | 1.5 V | 230 nC | Enhancement | ||||
|
|
538
In-stock
|
IXYS | MOSFET 75 Amps 100V 0.025 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 25 mOhms | Enhancement | ||||||
|
|
651
In-stock
|
Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 9mOhms 56nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 7.34 mOhms | 4 V | 56 nC | |||||
|
|
98
In-stock
|
Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 2.3mOhms 160nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 280 A | 2.3 mOhms | 160 nC | Enhancement | |||||
|
|
582
In-stock
|
Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 5.8mOhms 79nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 120 A | 4.6 mOhms | 2 V to 4 V | 79 nC | Enhancement | ||||
|
|
434
In-stock
|
Infineon Technologies | MOSFET 200V SINGLE N-CH 82mOhms 70nC | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 31 A | 82 mOhms | 70 nC | Enhancement | |||||
|
|
631
In-stock
|
IR / Infineon | MOSFET MOSFT 60V 57A 12mOhm 43nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 57 A | 9.6 mOhms | 4 V | 43 nC | |||||
|
|
183
In-stock
|
IXYS | MOSFET 62 Amps 150V 0.04 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 62 A | 33 mOhms | 5.5 V | 70 nC | Enhancement | PolarHT | |||
|
|
311
In-stock
|
STMicroelectronics | MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.6 mOhms | 2 V | 30 nC | Enhancement | ||||
|
|
74
In-stock
|
IXYS | MOSFET 110Amps 150V | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 110 A | 11 mOhms | 2.5 V | 150 nC | Enhancement | ||||
|
|
94
In-stock
|
IXYS | MOSFET 40V/340A TrenchT4 Power MOSFET | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 340 A | 1.7 mOhms | 2 V | 256 nC | Enhancement | TrenchT4 | |||
|
|
234
In-stock
|
IXYS | MOSFET 90 Amps 55V 0.0084 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 90 A | 8.4 mOhms | Enhancement | ||||||
|
|
100
In-stock
|
IXYS | MOSFET 40V/270A TrenchT4 Power MOSFET | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 270 A | 2.2 mOhms | 2 V | 182 nC | Enhancement | TrenchT4 | |||
|
|
152
In-stock
|
Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 3.7mOhms 100nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 190 A | 3.7 mOhms | 100 nC | Enhancement | |||||
|
|
145
In-stock
|
IXYS | MOSFET 60 Amps 100V 18.0 Rds | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 60 A | 18 mOhms | Enhancement | |||||||
|
|
29
In-stock
|
IXYS | MOSFET 32 Amps 200V 78 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 32 A | 78 mOhms | 5 V | 38 nC | Enhancement | Trench | |||
|
|
88
In-stock
|
IXYS | MOSFET 110 Amps 55V 0.0066 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 110 A | 6.6 mOhms | Enhancement | ||||||
|
|
62
In-stock
|
IXYS | MOSFET 60V/220A TrenchT3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 60 V | 220 A | 4 mOhms | 2 V | 136 nC | Enhancement | HiPerFET | |||
|
|
75
In-stock
|
IXYS | MOSFET 50 Amps 200V 0.06 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 50 A | 60 mOhms | 5 V | 70 nC | Enhancement | PolarHT | |||
|
|
100
In-stock
|
IXYS | MOSFET 90 Amps 75V 0.01 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 90 A | 10 mOhms | Enhancement | ||||||
|
|
100
In-stock
|
IXYS | MOSFET 100 Amps 40V | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 7 mOhms | Enhancement | ||||||
|
|
44
In-stock
|
IXYS | MOSFET 160Amps 40V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 160 A | 5 mOhms | 4 V | 79 nC | Enhancement |
