- Vgs - Gate-Source Voltage :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
17 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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21,351
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 20 A, 20 A | 7.2 mOhms, 7.2 mOhms | 1.2 V, 1.2 V | 39 nC, 39 nC | Enhancement | OptiMOS | ||||
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17,192
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 20 A, 20 A | 21 mOhms, 21 mOhms | 1.2 V, 1.2 V | 20 nC, 20 nC | Enhancement | OptiMOS | |||
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4,007
In-stock
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Infineon Technologies | MOSFET N-Ch 55V 20A TDSON-8 | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 20 A, 20 A | 21 mOhms, 21 mOhms | 1.2 V, 1.2 V | 20 nC, 20 nC | Enhancement | |||||
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56,750
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 20 A, 20 A | 21 mOhms, 21 mOhms | 1.2 V, 1.2 V | 20 nC, 20 nC | Enhancement | |||||
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4,680
In-stock
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Infineon Technologies | MOSFET N-Ch 55V 20A TDSON-8 | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 20 A, 20 A | 21 mOhms, 21 mOhms | 1.2 V, 1.2 V | 20 nC, 20 nC | Enhancement | |||||
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193
In-stock
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Infineon Technologies | MOSFET MOSFET | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 29 mOhms, 29 mOhms | 1.1 V, 1.1 V | 17.4 nC, 17.4 nC | Enhancement | |||||
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1,652
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | 20 V, 20 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 20 A, 20 A | 7.9 mOhms, 7.9 mOhms | 2 V, 2 V | 28 nC, 28 nC | Enhancement | OptiMOS | ||||
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477
In-stock
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Infineon Technologies | MOSFET N-CHANNEL 100+ | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 31 mOhms, 31 mOhms | 2.7 V | 9.4 nC | Enhancement | |||||
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14,452
In-stock
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Infineon Technologies | MOSFET MOSFET | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 20 mOhms, 20 mOhms | 1.1 V, 1.1 V | 27 nC, 27 nC | Enhancement | |||||
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4,948
In-stock
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Infineon Technologies | MOSFET MOSFET | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 20 mOhms, 20 mOhms | 1.1 V, 1.1 V | 27 nC, 27 nC | Enhancement | |||||
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5,000
In-stock
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Infineon Technologies | MOSFET MOSFET | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 29 mOhms, 29 mOhms | 1.1 V, 1.1 V | 17.4 nC, 17.4 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET MOSFET_(75V,120V( | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 20 mOhms, 20 mOhms | 1.1 V, 1.1 V | 27 nC, 27 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET N-CHANNEL_30/40V | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 20 A, 20 A | 10.1 mOhms, 10.1 mOhms | 1.2 V, 1.2 V | 26 nC, 26 nC | Enhancement | |||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-CHANNEL_100+ | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 20 mOhms, 20 mOhms | 1.1 V, 1.1 V | 27 nC, 27 nC | Enhancement | CoolMOS | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 20 A, 20 A | 7.2 mOhms, 7.2 mOhms | 1.2 V, 1.2 V | 39 nC, 39 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET N-CHANNEL_30/40V | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 20 A, 20 A | 10.1 mOhms, 10.1 mOhms | 1.2 V, 1.2 V | 26 nC, 26 nC | Enhancement | CoolMOS | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | 20 V, 20 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 20 A, 20 A | 7.9 mOhms, 7.9 mOhms | 2 V, 2 V | 28 nC, 28 nC | Enhancement |