- Vgs - Gate-Source Voltage :
- Mounting Style :
- Number of Channels :
- Rds On - Drain-Source Resistance :
-
- 0.0008 Ohms (2)
- 0.0012 Ohms (1)
- 0.0013 Ohms (1)
- 0.0015 Ohms (1)
- 1.1 mOhms (1)
- 1.3 mOhms (5)
- 1.4 mOhms (2)
- 11 mOhms (1)
- 2 mOhms (3)
- 2.2 mOhms (2)
- 2.5 mOhms (1)
- 2.6 mOhms (1)
- 2.8 mOhms (1)
- 3.1 mOhms (1)
- 3.3 mOhm (1)
- 3.3 mOhms (1)
- 4 mOhms (1)
- 4.1 mOhms (1)
- 4.2 mOhms (1)
- 5.1 mOhms (1)
- 5.3 mOhms (1)
- 5.4 mOhms (1)
- 5.5 mOhms (2)
- 6.6 mOhms (1)
- 7.4 mOhms (1)
- 7.5 mOhms (4)
- 7.7 mOhms (1)
40 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,457
In-stock
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Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 1.5mOhms 200nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 A | 1.1 mOhms | 200 nC | Enhancement | Directfet | ||||
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92
In-stock
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IXYS | MOSFET 100V 200A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 5.4 mOhms | |||||||
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988
In-stock
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STMicroelectronics | MOSFET N-CH 40V 11mOhm 200A STripFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 200 A | 1.3 mOhms | 2 V | 240 nC | Enhancement | ||||
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964
In-stock
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STMicroelectronics | MOSFET N-CH 40V 11mOhm typ 200A STripFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 200 A | 1.3 mOhms | 2 V | 240 nC | Enhancement | ||||
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1,659
In-stock
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Vishay Semiconductors | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-8x8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 200 A | 0.0013 Ohms | 1.5 V | 260 nC | Enhancement | TrenchFET | |||
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214
In-stock
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Fairchild Semiconductor | MOSFET 100V TO263 7L JEDEC GREEN EMC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 200 A | 6.6 mOhms | 2 V | 84 nC | Enhancement | ||||
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276
In-stock
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Fairchild Semiconductor | MOSFET 100V TO263 7L JEDEC GREEN EMC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 200 A | 11 mOhms | 2 V | 81 nC | Enhancement | ||||
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68
In-stock
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IXYS | MOSFET 200 Amps 100V 0.0075 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 7.5 mOhms | Enhancement | HyperFET | |||||
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GET PRICE |
90,600
In-stock
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onsemi | MOSFET NFET SO8FL 40V 200A | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 200 A | 2.2 mOhms | 1.2 V | 70 nC | Enhancement | |||
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770
In-stock
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Siliconix / Vishay | MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 40 V | 200 A | 0.0015 Ohms | 2.5 V | 310 nC | Enhancement | TrenchFET | ||||
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782
In-stock
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Vishay Semiconductors | MOSFET 40V 200A, 375W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 200 A | 0.0008 Ohms | 1.5 V | 413 nC | Enhancement | TrenchFET | |||
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514
In-stock
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Vishay Semiconductors | MOSFET 40V 200A 375 AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 200 A | 0.0012 Ohms | 1.5 V | 291 nC | Enhancement | TrenchFET | |||
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20
In-stock
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IXYS | MOSFET 200 Amps 100V 0.0075 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 7.5 mOhms | Enhancement | HyperFET | |||||
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19
In-stock
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IXYS | MOSFET 200 Amps 100V 0.0075 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 7.5 mOhms | 5 V | 235 nC | Enhancement | Polar, HiPerFET | |||
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66
In-stock
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IXYS | MOSFET 200 Amps 55V 0.0042 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 200 A | 4.2 mOhms | Enhancement | ||||||
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20
In-stock
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IR / Infineon | MOSFET MOSFT 40V 200A 3.1mOhm 75nC Log Lvl | SMD/SMT | TO-263-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 200 A | 3.1 mOhms | 2.7 V | 110 nC | |||||||
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492
In-stock
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Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET 3-DDPAK/TO... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 200 A | 1.4 mOhms | 1.4 V | 153 nC | Enhancement | ||||
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350
In-stock
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Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 200 A | 1.4 mOhms | 1.4 V | 153 nC | Enhancement | NexFET | |||
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1,595
In-stock
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Texas instruments | MOSFET 60V N-Channel NexFET Power MOSFET 3-DDPAK/TO-2... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 A | 5.1 mOhms | 1.5 V | 44 nC | Enhancement | NexFET | |||
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350
In-stock
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Texas instruments | MOSFET 100V N-CH NexFET Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 2.5 mOhms | 2.5 V | 118 nC | NexFET | ||||
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290
In-stock
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Texas instruments | MOSFET 100V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 200 A | 2.8 mOhms | 2.1 V | 118 nC | Enhancement | NexFET | |||
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995
In-stock
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Texas instruments | MOSFET 60V N-Channel NexFET Pwr MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 A | 3.3 mOhm | 1.8 V | 44 nC | Enhancement | NexFET | |||
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172
In-stock
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Texas instruments | MOSFET CSD18536KCS 60 V N-Channel NexFET? Power MOSFET... | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 200 A | 1.3 mOhms | 1.4 V | 108 nC | Enhancement | ||||
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156
In-stock
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Texas instruments | MOSFET 100V 6.4mOhm Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 7.7 mOhms | 2.7 V | 38 nC | Enhancement | NexFET | |||
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157
In-stock
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Texas instruments | MOSFET 100V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 200 A | 5.3 mOhms | 2.6 V | 44 nC | NexFET | ||||
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170
In-stock
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Texas instruments | MOSFET 100V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 200 A | 4.1 mOhms | 2.2 V | 75 nC | Enhancement | NexFET | |||
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138
In-stock
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Texas instruments | MOSFET 80V N-CH Power MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 200 A | 2.2 mOhms | 2.5 V | 120 nC | NexFET | ||||
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93
In-stock
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Texas instruments | MOSFET 60V, N-Channel NexFET Power MOSFET 3-DDPAK/TO-... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 A | 1.3 mOhms | 1.8 V | 140 nC | Enhancement | NexFET | |||
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235
In-stock
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Texas instruments | MOSFET 60V, N-Channel NexFET Power MOSFET 3-DDPAK/TO-... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 A | 1.3 mOhms | 1.8 V | 140 nC | Enhancement | NexFET | |||
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2,143
In-stock
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Texas instruments | MOSFET 60V, N-Channel NexFET Power MOSFET 3-DDPAK/TO-... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 A | 2 mOhms | 1.9 V | 81 nC | Enhancement | NexFET |
