- Manufacture :
- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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7,990
In-stock
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onsemi | MOSFET 60V 3A N-Channel | 15 V | SMD/SMT | SOT-223-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 3 A | 120 mOhms | Enhancement | |||||
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1,221
In-stock
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IR / Infineon | MOSFET AUTO 50V 1 N-CH HEXFET 130mOhms | 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 50 V | 3 A | 200 mOhms | 3 V | 10 nC | Enhancement | |||
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1,886
In-stock
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onsemi | MOSFET NFET 60V 3A 0.120R | 15 V | SMD/SMT | SOT-223-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 3 A | 120 mOhms | ||||||
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1,785
In-stock
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onsemi | MOSFET NFET 60V 3A 0.100R | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 3 A | 88 mOhms | 10.6 nC | |||||
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13,000
In-stock
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onsemi | MOSFET 60V 3A N-Channel | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 3 A | 110 mOhms | Enhancement |
