- Manufacture :
- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
- Tradename :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
4,625
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 50A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | OptiMOS | ||||
|
1,953
In-stock
|
Fairchild Semiconductor | MOSFET 150V NCh UltraFET Power Trench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 79 A | 16 mOhms | Enhancement | PowerTrench | ||||||
|
183
In-stock
|
Fairchild Semiconductor | MOSFET 75a 150V 0.016 Ohm N-Ch MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 75 A | 16 mOhms | Enhancement | UltraFET | ||||||
|
450
In-stock
|
Fairchild Semiconductor | MOSFET N-CHAN UltraFET Pwr 75A 150V 0.016Ohm | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 75 A | 16 mOhms | |||||||||
|
304
In-stock
|
IXYS | MOSFET POLAR HT MOSFET 150V 120A | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 120 A | 16 mOhms | 5 V | 150 nC | Enhancement | PolarHT | ||||
|
833
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 50A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | OptiMOS | ||||
|
46,200
In-stock
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | |||||
|
120
In-stock
|
IXYS | MOSFET 120 Amps 150V 0.016 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 120 A | 16 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 120 Amps 150V 0.016 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 120 A | 16 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 120 Amps 150V 0.016 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 120 A | 16 mOhms | 5 V | 150 nC | Enhancement | PolarHT | ||||
|
60,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 50A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | OptiMOS |