- Manufacture :
- Qg - Gate Charge :
- Tradename :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,247
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 16mOhms 59.3nC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 64 A | 16 mOhms | 4 V | 89 nC | Enhancement | ||||
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183
In-stock
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Fairchild Semiconductor | MOSFET 75a 150V 0.016 Ohm N-Ch MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 75 A | 16 mOhms | Enhancement | UltraFET | |||||
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450
In-stock
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Fairchild Semiconductor | MOSFET N-CHAN UltraFET Pwr 75A 150V 0.016Ohm | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 75 A | 16 mOhms | ||||||||
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120
In-stock
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IXYS | MOSFET 120 Amps 150V 0.016 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 120 A | 16 mOhms | Enhancement | HyperFET | |||||
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59
In-stock
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IXYS | MOSFET 130Amps 200V | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 130 A | 16 mOhms | 5 V | 150 nC | Enhancement |
