- Manufacture :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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10,760
In-stock
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IR / Infineon | MOSFET 100V 170A 4.7 mOhm Automotive MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 4.7 mOhms | 4 V | 143 nC | ||||
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1,216
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 135A 4.7mOhm 150nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 135 A | 4.7 mOhms | 4 V | 150 nC | ||||
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4,790
In-stock
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onsemi | MOSFET TRENCH 3.1 30V 4 mOhm NCH | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 17.8 A | 4.7 mOhms | 1.8 V | 17.2 nC | ||||
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308
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 4.7mOhms 150nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 135 A | 4.7 mOhms | 2 V to 4 V | 150 nC | Enhancement |
