- Package / Case :
- Tradename :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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17,480
In-stock
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STMicroelectronics | MOSFET N-Ch 60 Volt 55 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 50 A | 18 mOhms | Enhancement | ||||||
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4,000
In-stock
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Fairchild Semiconductor | MOSFET 150V N-Channel QFET | 25 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 90 A | 18 mOhms | Enhancement | QFET | |||||
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968
In-stock
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STMicroelectronics | MOSFET N-Ch 120 Volt 80 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 120 V | 80 A | 18 mOhms | Enhancement | ||||||
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1,199
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 28A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 28 A | 18 mOhms | 7 nC | Enhancement | OptiMOS | ||||
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296
In-stock
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IXYS | MOSFET MOSFET Id60 BVdass100 | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 60 A | 18 mOhms | Enhancement | |||||||
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2,800
In-stock
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IXYS | MOSFET 140 Amps 200V 0.018 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 140 A | 18 mOhms | Enhancement | HyperFET | |||||
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81
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 18mOhms 82nC | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 18 mOhms | 82 nC | Enhancement | |||||
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6
In-stock
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IXYS | MOSFET 140 Amps 200V 0.018 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 140 A | 18 mOhms | Enhancement | ||||||
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20
In-stock
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IXYS | MOSFET 102 Amps 150V 18 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 102 A | 18 mOhms | Enhancement | ||||||
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1,623
In-stock
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STMicroelectronics | MOSFET N-Ch 30 Volt 40 Amp | 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 40 A | 18 mOhms | Enhancement | ||||||
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674
In-stock
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STMicroelectronics | MOSFET N-Ch 100V 0.0145 Ohm typ 30A STripFET VII | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 30 A | 18 mOhms | 4.5 V | 25 nC | |||||
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VIEW | STMicroelectronics | MOSFET N-channel 100 V 0 013 Ohm typ 45 A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 45 A | 18 mOhms | 4.5 V | 25 nC |