6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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17,480
In-stock
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STMicroelectronics | MOSFET N-Ch 60 Volt 55 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 50 A | 18 mOhms | Enhancement | ||||||
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968
In-stock
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STMicroelectronics | MOSFET N-Ch 120 Volt 80 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 120 V | 80 A | 18 mOhms | Enhancement | ||||||
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296
In-stock
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IXYS | MOSFET MOSFET Id60 BVdass100 | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 60 A | 18 mOhms | Enhancement | |||||||
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20
In-stock
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IXYS | MOSFET 102 Amps 150V 18 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 102 A | 18 mOhms | Enhancement | ||||||
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1,623
In-stock
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STMicroelectronics | MOSFET N-Ch 30 Volt 40 Amp | 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 40 A | 18 mOhms | Enhancement | ||||||
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VIEW | STMicroelectronics | MOSFET N-channel 100 V 0 013 Ohm typ 45 A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 45 A | 18 mOhms | 4.5 V | 25 nC |