- Manufacture :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,767
In-stock
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IR / Infineon | MOSFET 40V 195A 1.5mOhm 150nC StrongIRFET | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 295 A | 1.4 mOhms | 3.9 V | 225 nC | Enhancement | StrongIRFET | |||||
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2,491
In-stock
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Infineon Technologies | MOSFET Automotive HEXFET COOLiRFET | 20 V | SMD/SMT | PQFN-8 | - 55C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 95 A | 3.3 mOhms | 3.9 V | 65 nC | Enhancement | |||||
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822
In-stock
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Infineon Technologies | MOSFET Auto 40V N-Ch FET 4.3mOhms 100A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 4.25 mOhms | 3.9 V | 42 nC | Enhancement | CoolIRFet | ||||
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239
In-stock
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Infineon Technologies | MOSFET 40V, 90A, 2.5 mOhm 89 nC Qg, I-Pak | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 2.4 mOhms | 3.9 V | 134 nC | Enhancement | StrongIRFET | |||||
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219
In-stock
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IR / Infineon | MOSFET 40V, 120A, 2.5 mOhm 90 nC Qg, TO-262 | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 208 A | 2.5 mOhms | 3.9 V | 135 nC | Enhancement | StrongIRFET | |||||
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100
In-stock
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IR / Infineon | MOSFET 40V, 195A, 1.8 mOhm 150 nC Qg, TO-262 | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 250 A | 1.8 mOhms | 3.9 V | 225 nC | Enhancement | StrongIRFET | |||||
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80,000
In-stock
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IR / Infineon | MOSFET 40V 195A 1.8mOhm 150nC StrongIRFET | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 250 A | 1.8 mOhms | 3.9 V | 225 nC | Enhancement | StrongIRFET | |||||
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2,399
In-stock
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Infineon Technologies | MOSFET 40V 120A 2.5mOhm 90nC StrongIRFET | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 208 A | 2.5 mOhms | 3.9 V | 135 nC | Enhancement | StrongIRFET | |||||
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321
In-stock
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IR / Infineon | MOSFET 40V, 120A, 2.5 mOhm 90 nC Qg, D2-Pak | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 208 A | 2.5 mOhms | 3.9 V | 135 nC | Enhancement | StrongIRFET | |||||
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79
In-stock
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IR / Infineon | MOSFET 40V StrongIRFET 195A, 1.2mOhm,300nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.2 mOhms | 3.9 V | 300 nC | StrongIRFET |