- Vgs - Gate-Source Voltage :
- Mounting Style :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
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- 2.9 mOhms (2)
- 21 mOhms (1)
- 3.5 mOhms (3)
- 3.6 mOhms (2)
- 3.9 mOhms (1)
- 30 mOhms (1)
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- 7.3 mOhms (1)
- 7.7 mOhms (1)
- 700 mOhms (2)
- 9 mOhms (3)
- 970 uOhms (1)
- Qg - Gate Charge :
-
- 100 nC (1)
- 11 nC (2)
- 14 nC (1)
- 140 nC (7)
- 15 nC (1)
- 16 nC (1)
- 17 nC (3)
- 170 nC (2)
- 172 nC (1)
- 177 nC (1)
- 18 nC (2)
- 180 nC (1)
- 181 nC (1)
- 186 nC (1)
- 204 nC (1)
- 220 nC (1)
- 227 nC (2)
- 26 nC (1)
- 267 nC (1)
- 27 nC (1)
- 28 nC (1)
- 29.1 nC (1)
- 3.7 nC (1)
- 30 nC (2)
- 307 nC (1)
- 31 nC (4)
- 33 nC (2)
- 34 nC (1)
- 35 nC (1)
- 37 nC (1)
- 41.3 nC (2)
- 420 nC (1)
- 47.1 nC (1)
- 48 nC (2)
- 53 nC (1)
- 56 nC (2)
- 66.7 nC (1)
- 7.9 nC (2)
- 75 nC (2)
- 83 nC (1)
- 9.9 nC (1)
- 91 nC (2)
- 96 nC (1)
66 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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1,464
In-stock
|
STMicroelectronics | MOSFET N-channel 30 V, 2 mOhm typ., 120 A, STripFET H6 Power M... | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 30 V | 120 A | 2.15 mOhms | 1 V | 53 nC | Enhancement | |||||
|
|
933
In-stock
|
Infineon Technologies | MOSFET | +/- 20 V | SMD/SMT | D2PAK-7 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 40 V | 557 A | 500 uOhms | 1 V | 307 nC | Enhancement | StrongIRFET | ||||
|
|
100
In-stock
|
Infineon Technologies | MOSFET | +/- 20 V | SMD/SMT | D2PAK-7 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 40 V | 478 A | 600 uOhms | 1 V | 267 nC | Enhancement | StrongIRFET | ||||
|
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29,293
In-stock
|
Fairchild Semiconductor | MOSFET PT8 N 30/20 in Powerclip 56 Single | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 423 A | 650 uOhms | 1 V | 204 nC | Enhancement | PowerTrench Power Clip | |||
|
|
5,263
In-stock
|
IR / Infineon | MOSFET 40V, 375A, .59 mOhm 220 nC Qg, Logic Lvl | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 564 A | 970 uOhms | 1 V | 220 nC | Enhancement | StrongIRFET | |||
|
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4,416
In-stock
|
Fairchild Semiconductor | MOSFET 40/20V 550A NChnl LL Power Trench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 7.3 mOhms | 1 V | 30 nC | Enhancement | ||||
|
|
5,417
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 35 A | 11.7 mOhms | 1 V | 37 nC | Enhancement | PowerTrench | |||
|
|
5,845
In-stock
|
Fairchild Semiconductor | MOSFET 40V 80A NChnl Logic Level Power Trench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 2.9 mOhms | 1 V | 83 nC | Enhancement | PowerTrench | |||
|
|
1,600
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 110 A | 2 mOhms | 1 V | 186 nC | Enhancement | PowerTrench | |||
|
|
GET PRICE |
13,472
In-stock
|
Infineon Technologies | MOSFET 40V, 195A, 1.25 mOhm 180 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 414 A | 1.6 mOhms | 1 V | 180 nC | Enhancement | StrongIRFET | ||
|
|
2,178
In-stock
|
Infineon Technologies | MOSFET 60V, 195A, 1.9 mOhm 172 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 305 A | 2.2 mOhms | 1 V | 172 nC | Enhancement | StrongIRFET | |||
|
|
2,663
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 90A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 90 A | 1.8 mOhms | 1 V | 140 nC | Enhancement | OptiMOS | |||
|
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3,806
In-stock
|
STMicroelectronics | MOSFET Automotive-grade N-channel 60 V, 19 mOhm typ., 24 A STripFE... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 24 A | 30 mOhms | 1 V | 26 nC | Enhancement | ||||
|
|
2,775
In-stock
|
Infineon Technologies | MOSFET 40V, 120A, 2.7 mOhm 56 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 164 A | 3.5 mOhms | 1 V | 56 nC | Enhancement | StrongIRFET | |||
|
|
1,165
In-stock
|
Infineon Technologies | MOSFET 60V, 298A, 1.95 mOhm 170 NC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 298 A | 1.6 mOhms | 1 V | 170 nC | Enhancement | StrongIRFET | |||
|
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4,441
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 5.4 mOhms | 1 V | 11 nC | Enhancement | OptiMOS | |||
|
|
706
In-stock
|
Infineon Technologies | MOSFET 60V, 298A, 1.95 mOhm 170 NC Qg | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 298 A | 1.6 mOhms | 1 V | 170 nC | Enhancement | StrongIRFET | |||
|
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2,846
In-stock
|
IR / Infineon | MOSFET 40V, 195A, 1.9 mOhm 91 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 254 A | 2.4 mOhms | 1 V | 91 nC | Enhancement | StrongIRFET | |||
|
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1,550
In-stock
|
IR / Infineon | MOSFET 40V, 195A, 1.9 mOhm 91 nC Qg, Logic Lvl | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 254 A | 2.4 mOhms | 1 V | 91 nC | Enhancement | StrongIRFET | |||
|
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2,500
In-stock
|
Diodes Incorporated | MOSFET 60V 175c N-Ch FET 5.5mOhm 10Vgs 100A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 10 mOhms | 1 V | 47.1 nC | Enhancement | ||||
|
|
675
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 180 A | 700 mOhms | 1 V | 227 nC | Enhancement | OptiMOS | |||
|
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4,264
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 4.2 mOhms | 1 V | 31 nC | Enhancement | OptiMOS | |||
|
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2,476
In-stock
|
onsemi | MOSFET NFET DPAK 100V 23A 56MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 25 A | 43 mOhms | 1 V | 35 nC | Enhancement | ||||
|
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3,864
In-stock
|
STMicroelectronics | MOSFET Automotive-grade N-channel 30 V, 25 mOhm typ, 10 A STripFE... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 33 mOhms | 1 V | 3.7 nC | Enhancement | ||||
|
|
1,180
In-stock
|
onsemi | MOSFET T5 100V LL S08FL | 16 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 19 mOhms | 1 V | 17 nC | Enhancement | ||||
|
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914
In-stock
|
onsemi | MOSFET T5 100V LL S08FL | 16 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 19 mOhms | 1 V | 17 nC | Enhancement | ||||
|
|
2,486
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 90A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 90 A | 2.5 mOhms | 1 V | 75 nC | Enhancement | ||||
|
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1,896
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 90A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 90 A | 2.6 mOhms | 1 V | 33 nC | Enhancement | OptiMOS | |||
|
|
2,244
In-stock
|
Diodes Incorporated | MOSFET N-Ch Enh Mode FET 80V 20Vgss 80A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 50 A | 12.1 mOhms | 1 V | 34 nC | Enhancement | ||||
|
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466
In-stock
|
IR / Infineon | MOSFET N-CHANNEL 30 / 40 | 16 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 500 A | 1.1 mOhms | 1 V | 177 nC | Enhancement |
