MOSFET - Kaimeite

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3 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	IXFX120N25P	1+ $11.000 10+ $10.120 25+ $9.700 100+ $8.550		PDF RFQ	25 In-stock	IXYS	MOSFET 120 Amps 250 V 0.24 Ohm Rds	20 V	Through Hole	TO-247-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	250 V	120 A	24 mOhms	5 V	185 nC	Enhancement	PolarHT, HiPerFET
	IXTK120N25P	1+ $11.610 10+ $10.500 25+ $10.010 100+ $8.690		PDF RFQ	10 In-stock	IXYS	MOSFET 120 Amps 250V 0.024 Rds	20 V	Through Hole	TO-264-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	250 V	120 A	24 mOhms	5 V	185 nC	Enhancement	PolarHT
	IRFS4229PBF	1+ $3.700 10+ $3.150 100+ $2.730 250+ $2.590		PDF RFQ	1,050 In-stock	IR / Infineon	MOSFET 250V 1 N-CH HEXFET PDP SWITCH	30 V	SMD/SMT	TO-252-3	- 40 C	+ 175 C	Tube	1 Channel	Si	N-Channel	250 V	45 A	42 mOhms	5 V	72 nC	Enhancement

IXFX120N25P

IXFX120N25P

IXYS

MOSFET 120 Amps 250 V 0.24 Ohm Rds

Stock : 25

1+: $11.000

10+: $10.120

25+: $9.700

100+: $8.550

IXTK120N25P

IXTK120N25P

IXYS

MOSFET 120 Amps 250V 0.024 Rds

Stock : 10

1+: $11.610

10+: $10.500

25+: $10.010

100+: $8.690

IRFS4229PBF

IRFS4229PBF

IR / Infineon

MOSFET 250V 1 N-CH HEXFET PDP SWITCH

Stock : 1,050

1+: $3.700

10+: $3.150

100+: $2.730

250+: $2.590

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