- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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12,000
In-stock
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Infineon Technologies | MOSFET MOSFT 40V 190A 3.7mOhm 100nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 2.7 mOhms | 4 V | 100 nC | |||||
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1,775
In-stock
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Vishay Semiconductors | MOSFET -40V 75A 83W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 75 A | 0.0028 Ohms | 1.5 V | 100 nC | Enhancement | TrenchFET | |||
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790
In-stock
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Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 3.7 mOhms | 4 V | 100 nC | Enhancement | ||||
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152
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 3.7mOhms 100nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 190 A | 3.7 mOhms | 100 nC | Enhancement | |||||
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29
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET PWR MOSFET 6.5mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 130 A | 9 mOhms | 1 V | 100 nC | Enhancement |
