- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Tradename :
14 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,557
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 35 A | 20 mOhms | 1.2 V | 39 nC | Enhancement | OptiMOS | |||
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4,351
In-stock
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Infineon Technologies | MOSFET 100V SINGLE N-CH 28.5mOhms 39nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 35 A | 22.5 mOhms | 4 V | 39 nC | |||||
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2,850
In-stock
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IR / Infineon | MOSFET 100V SINGLE N-CH 28.5mOhms 39nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 35 A | 28.5 mOhms | 4 V | 39 nC | Enhancement | ||||
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2,475
In-stock
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Fairchild Semiconductor | MOSFET UltraFET Power MOSFET | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 20 A | 41 mOhms | 1.6 V | 39 nC | |||||
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2,157
In-stock
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Vishay Semiconductors | MOSFET 40V 16A 62W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 16 A | 0.008 Ohms | 1.5 V | 39 nC | Enhancement | TrenchFET | |||
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2,996
In-stock
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Vishay Semiconductors | MOSFET 30V 16A 62W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16 A | 0.007 Ohms | 1.5 V | 39 nC | Enhancement | TrenchFET | |||
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1,182
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 35 A | 20 mOhms | 1.2 V | 39 nC | Enhancement | ||||
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424
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 10.6A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 650 V | 10.6 A | 380 mOhms | 39 nC | CoolMOS | |||||
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963
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 35 A | 20.3 mOhms | 1.2 V | 39 nC | Enhancement | OptiMOS | |||
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1,999
In-stock
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Toshiba | MOSFET UMOSVIII 40V 4.3m max(VGS=10V) DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 65 A | 3.3 mOhms | 2.5 V | 39 nC | Enhancement | ||||
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800
In-stock
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Fairchild Semiconductor | MOSFET N-Chan PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 37 A | 97 mOhms | 4 V | 39 nC | Enhancement | PowerTrench | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 35 A | 20.3 mOhms | 1.2 V | 39 nC | Enhancement | ||||
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636
In-stock
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IR / Infineon | MOSFET MOSFT 30V 160A 39nC 3.1mOhm Qg log lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 160 A | 3.1 mOhms | 2.35 V | 39 nC | |||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 | 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V | 20 A | 7.2 mOhms | 1.7 V | 39 nC | Enhancement |
