2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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161
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 115mOhms 29.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 15 A | 115 mOhms | 29.3 nC | Enhancement | |||
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2,000
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 115mOhms 29.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 15 A | 115 mOhms | 29.3 nC | Enhancement |
