- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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542
In-stock
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Siliconix / Vishay | MOSFET N-Channel 200V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 200 V | 60 A | 0.028 Ohms | 2.5 V | 135 nC | Enhancement | TrenchFET | ||||
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800
In-stock
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Siliconix / Vishay | MOSFET N-Channel 200V D2PAK (TO-263) | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 200 V | 64 A | 0.018 Ohms | 2 V | 48 nC | Enhancement | |||||
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490
In-stock
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Siliconix / Vishay | MOSFET N-Channel 200V TO-220 | +/- 20 V | Through Hole | TO-220AB-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 200 V | 64 A | 0.018 Ohms | 2 V | 48 nC | Enhancement | |||||
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2,761
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 7A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 7 A | 300 mOhms | 2.1 V | 31.5 nC | Enhancement | SIPMOS | |||
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2,500
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 7A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 7 A | 300 mOhms | 2.1 V | 31.5 nC | Enhancement | OptiMOS |
