- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,500
In-stock
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onsemi | MOSFET T6 60V HEFET | +/- 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 287 A | 0.93 mOhms | 1.2 V | 120 nC | Enhancement | |||
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1,500
In-stock
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onsemi | MOSFET T6 40V HEFET | +/- 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 370 A | 0.52 mOhms | 1.2 V | 181 nC | Enhancement | |||
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1,500
In-stock
|
onsemi | MOSFET T6 60V HEFET | +/- 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 287 A | 0.93 mOhms | 1.2 V | 120 nC | Enhancement | |||
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1,500
In-stock
|
onsemi | MOSFET T6 40V HEFET | +/- 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 370 A | 0.52 mOhms | 1.2 V | 181 nC | Enhancement | |||
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1,500
In-stock
|
onsemi | MOSFET T6 60V SO8FL | +/- 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.3 mOhms | 1.2 V | 34 nC | Enhancement |
