- Manufacture :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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870
In-stock
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Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 100mOhms 23.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 19 A | 100 mOhms | 23.3 nC | Enhancement | |||
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638
In-stock
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IR / Infineon | MOSFET 1 P-CH -55V HEXFET 100mOhms 23.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 19 A | 100 mOhms | 23.3 nC | Enhancement |
